Magnetic susceptibility of wide-gap semiconductors

被引：0
|
作者：
Davydov, SY
Tikhonov, SK
机构：
来源：
SEMICONDUCTORS | 1996年 / 30卷 / 04期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The magnetic susceptibilities of diamond, silicon carbide, and boron, aluminum, and gallium nitrides are calculated on the basis of Harrison's tight-binding model. The diamagnetic contributions of the core and valence electrons and the paramagnetic component are analyzed. It is shown that the magnetic susceptibility increases in the sequence SiC-BN-AlN-GaN. (C) 1996 American Institute of Physics.
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页码：375 / 376
页数：2
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