Anomalous Bias Temperature Instability on Accumulation-Mode Ge and III-V MOSFETs

被引：0

作者：

Si, Mengwei ^{[1
]}

Wu, Heng ^{[1
]}

Shin, SangHoon ^{[1
]}

Luo, Wei ^{[1
]}

Conrad, Nathan J. ^{[1
]}

Wu, Wangran ^{[1
]}

Zhang, Jingyun ^{[1
]}

Alam, Muhammad A. ^{[1
]}

Ye, Peide D. ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2017年

关键词：

Ge; InGaAs; reliability; BTI; Accumulation-mode MOSFETs; RELIABILITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we report the observation of anomalous bias temperature instability (ABTI) phenomenon on InGaAs accumulation-mode nMOSFET with Al2O3 as dielectric and Ge accumulation-mode pMOSFET with Al2O3/GeO2 gate stack. During NBTI measurement on Ge accumulation-mode pMOSFETs and PBTI measurement on InGaAs accumulation-mode nMOSFETs, threshold voltage shifts to the opposite direction comparing with classic NBTI and PBTI phenomenon. A simple model is proposed to explain the experimental observation. It is understood that trap neutral level alignment and donor-like and acceptor-like traps generation and recovery are the origins of the ABTI behavior.

引用

页数：6

共 32 条

[1] Arimura H, 2016, INT EL DEVICES MEET, DOI 10.1109/IEDM.2016.7838534
[2] Nanometre-scale electronics with III-V compound semiconductors
del Alamo, Jesus A.
[J]. NATURE, 2011, 479 (7373) : 317 - 323
[3] Positive Bias Instability and Recovery in InGaAs Channel nMOSFETs
Deora, S.
Bersuker, G.
Loh, W. -Y.
Veksler, D.
Matthews, K.
Kim, T. W.
Lee, R. T. P.
Hill, R. J. W.
Kim, D. -H.
Wang, W. -E.
Hobbs, C.
Kirsch, P. D.
[J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2013, 13 (04) : 507 - 514
[4] Fermi-level pinning and charge neutrality level in germanium
Dimoulas, A.
Tsipas, P.
Sotiropoulos, A.
Evangelou, E. K.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (25)
[5] Duriez B., 2013, IEEE IEDM, P522
[6] Franco J., 2014, IEEE INT REL PHYS S
[7] Gate Stack Reliability of MOSFETs With High-Mobility Channel Materials: Bias Temperature Instability
Gong, Xiao
Liu, Bin
Yeo, Yee-Chia
[J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2013, 13 (04) : 524 - 533
[8] Gu J.J., 2012, IEDM Tech. Digest, P633
[9] Kim D.-H., 2014, Electron Devices Meeting (IEDM), 2014 IEEE International, P578
[10] Lee S., 2013, S VLSI TECHN DIG TEC, P633

← 1 2 3 4 →