InAs Quantum Dot Clusters Grown on GaAs Droplet Templates: Surface Morphologies and Optical Properties

被引：1

作者：

Liang, B. L. ^{[1
]}

Dorogan, V. G. ^{[1
]}

Mazur, Yu. I. ^{[1
]}

Strom, N. W. ^{[1
]}

Lee, J. H. ^{[1
]}

Sablon, K. A. ^{[1
]}

Wang, Zh. M. ^{[1
]}

Salamo, G. J. ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2009年 / 9卷 / 05期

关键词：

GaAs Growth Template; InAs Quantum Dots; Photoluminescence; Droplet Epitaxy; Molecular Beam Epitaxy; SELF-ORGANIZATION; NANOLITHOGRAPHY; RELAXATION;

D O I：

10.1166/jnn.2009.VC11

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

GaAs nano-mounds formed by droplet epitaxy are used as templates for growth of self-assembled InAs quantum dot clusters (QDCs). These QDCs are found to contain an average of thirteen dots per cluster, of which there are two families of different sized quantum dots. Excitation intensity-dependent photoluminescence (PL) demonstrates that there is no lateral coupling between the two different size quantum dots. Lateral transfer of carriers is observed between different size quantum dots due to thermal activation as seen in their different temperature-dependent optical behaviors.

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页码：3320 / 3324

页数：5

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