MeV-GeV ion induced dislocation loops in LiF crystals

被引：11

作者：

Zabels, R. ^{[1
]}

Manika, I. ^{[1
]}

Schwartz, K. ^{[2
]}

Maniks, J. ^{[1
]}

Grants, R. ^{[1
]}

机构：

[1] Latvian State Univ, Inst Solid State Phys, LV-1063 Riga, Latvia

[2] GSI Helmholtzzentrum Schwerionenforsch, D-64291 Darmstadt, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2014年 / 326卷

关键词：

LiF crystal; U and S ion irradiation; Dislocations; Chemical etching; AFM; IRRADIATED ALKALI-HALIDES; SWIFT HEAVY-IONS; LITHIUM-FLUORIDE; DAMAGE; DEFECTS; CENTERS; ENERGY; TRACKS;

D O I：

10.1016/j.nimb.2013.10.043

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Formation of prismatic dislocation loops and evolution of dislocation structure in LiF crystals irradiated with swift U-238 and S-38 ions of specific energy 11 MeV/u at fluences up to 10(13) ions cm(-2) has been investigated using chemical etching and AFM. It has been shown that prismatic dislocations are formed in the stage of track overlapping above threshold fluences Phi approximate to 10(9) U cm(-2) and Phi approximate to. 10(10)S cm(-2). The diameter of dislocation loops reaches 600-1000 nm for U-238 ions and 200 nm for S-36 ions. The dislocations created by U-238 ions are arranged in rows along the direction of ion beam, whereas S-36 ions create freely distributed dislocation loops each of them being oriented along the ion beam. The role of dislocations in ioninduced nanostructuring and hardening is discussed. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：318 / 321

页数：4

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