Exchange-enhanced Lande g-factor, effective disorder and collapse of spin-splitting in a two-dimensional GaAs electron system

被引：4

作者：

Huang, TY

Cheng, YM

Liang, CT ^{[1
]}

Kim, GH

Leem, JY

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[2] ETRI, Telecommun Basic Res Lab, Taejon 305600, South Korea

[3] KRISS, Mat Evaluat Ctr, Taejon 305600, South Korea

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 12卷 / 1-4期

关键词：

spin; g-factor; GaAs;

D O I：

10.1016/S1386-9477(01)00326-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have measured the low-temperature transport properties of front-gated GaAs Al0.33Ga0.67As heterostructures. Collapse of spin-splitting and an enhanced Lande \g\-factor at Landau level filling factors both v = 3 and 1 are observed. Our experimental results show direct evidence that the electron-electron interactions are stronger at = 3 than those at I over approximately the same perpendicular magnetic field range. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：424 / 427

页数：4

共 4 条

[1] Spin-splitting in GaAs two-dimensional holes
Papadakis, SJ
De Poortere, EP
Shayegan, M
Winkler, R
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2001, 9 (01) : 31 - 39
[2] Effect of the Dresselhaus spin splitting on the effective Lande g-factor in GaAs-(Ga,Al)As quantum wells under in-plane or growth-direction magnetic fields
Porras-Monenegro, N.
Perdomo-Leiva, C. A.
Reyes-Gomez, E.
Brandi, H. S.
Oliveira, L. E.
MICROELECTRONICS JOURNAL, 2008, 39 (3-4) : 390 - 393
[3] Detecting the Sign Reversal of the g-Factor of Two-Dimensional Electrons in Narrow GaAs/AlxGa1-xAs Quantum Wells
Solov'ev, V. V.
Dietsche, W.
Kukushkin, I. V.
JETP LETTERS, 2015, 100 (11) : 746 - 750
[4] Detecting the sign reversal of the g-factor of two-dimensional electrons in narrow GaAs/AlxGa1 − xAs quantum wells
V. V. Solov’ev
W. Dietsche
I. V. Kukushkin
JETP Letters, 2015, 100 : 746 - 750

← 1 →