Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells

被引：46

作者：

Marcinkevicius, S. ^{[1
]}

Kelchner, K. M. ^{[2
]}

Kuritzky, L. Y. ^{[2
]}

Nakamura, S. ^{[2
]}

DenBaars, S. P. ^{[2
]}

Speck, J. S. ^{[2
]}

机构：

[1] KTH Royal Inst Technol, Dept Mat & Nanophys, S-16440 Kista, Sweden

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 11期

关键词：

YELLOW LUMINESCENCE; RADIATIVE LIFETIME; GALLIUM VACANCIES; GAN; PHOTOLUMINESCENCE; NONPOLAR; DEFECTS;

D O I：

10.1063/1.4820839

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier recombination in single 10 nm wide m-plane homoepitaxial In0.15Ga0.85N/GaN quantum wells was examined by time-resolved photoluminescence. The radiative recombination time at 3.5 K was found to be short, about 0.5 ns. This value and the single-exponential luminescence decay show that the localized exciton recombination is not affected by the in-plane electric field. At room temperature, the nonradiative recombination was prevalent. The data indicate that the nonradiative recombination proceeds via efficient recombination centers. Complexes of Ga vacancies with oxygen and/or related interface defects are suggested to play this role and thus provide a direction for future improvements in materials' quality. (C) 2013 AIP Publishing LLC.

引用

页数：5

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