Latch-up based bidirectional npn selector for bipolar resistance-change memory

被引：22

作者：

Kim, Sungho ^{[1
]}

Moon, Dong-Il ^{[2
]}

Lu, Wei ^{[1
]}

Kim, Dae Hwan ^{[3
]}

Kim, Dong Myong ^{[3
]}

Choi, Yang-Kyu ^{[2
]}

Choi, Sung-Jin ^{[3
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[2] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

[3] Kookmin Univ, Sch Elect Engn, Seoul 136702, South Korea

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

RRAM;

D O I：

10.1063/1.4813832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A vertically integrated latch-up based n-p-n bidirectional diode, which is analogous to an open-base bipolar junction transistor, is demonstrated for bipolar resistance-change memory selector application. A maximum current density of >50 MA/cm(2) and a selectivity of >10(4) are observed at a fast switching speed of within 10 ns. The high selectivity as a consequence of the sudden latch-up process is feasible owing to the positive-feedback process initiated by impact ionization. The optimization of the turn-on voltage is comprehensively investigated by numerical device simulation, which ensures the promising potential of the latch-up based selector device. (C) 2013 AIP Publishing LLC.

引用

页数：3

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