Enhancement of ultraviolet emissions from ZnO films by Ag doping

被引：136
作者：
Duan, Li [1 ]
Lin, Bixia [1 ]
Zhang, Weiying [1 ]
Zhong, Sheng [1 ]
Fu, Zhuxi [1 ]
机构：
[1] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 23期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2211053
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Ag-doped ZnO films were deposited on Si substrates by dc reactive sputtering. Obvious enhancement of ultraviolet (UV) emission of the samples was observed due to Ag2O nanoclusters formatted during Ag doping. The UV emission consisted of two peaks. The 348 nm peak was attributed to Ag2O nanoclusters, and the 382 nm one was attributed to ZnO. The strongest UV emission of a certain ZnO-Ag2O film was over ten times stronger than that of a pure ZnO film, which was an exciting result. The enhancement of UV emission was caused by excitons formed at the interface between Ag2O nanoclusters and ZnO grains. (c) 2006 American Institute of Physics.
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