Floquet Fractional Chern Insulators

被引:222
作者
Grushin, Adolfo G. [1 ,2 ]
Gomez-Leon, Alvaro [2 ]
Neupert, Titus [3 ]
机构
[1] Max Planck Inst Phys Komplexer Syst, D-01187 Dresden, Germany
[2] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain
[3] Princeton Univ, Princeton Ctr Theoret Sci, Princeton, NJ 08544 USA
基金
瑞士国家科学基金会;
关键词
TOPOLOGICAL INSULATOR; LANDAU-LEVELS; GRAPHENE;
D O I
10.1103/PhysRevLett.112.156801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We show theoretically that periodically driven systems with short range Hubbard interactions offer a feasible platform to experimentally realize fractional Chern insulator states. We exemplify the procedure for both the driven honeycomb and the square lattice, where we derive the effective steady state band structure of the driven system by using the Floquet theory and subsequently study the interacting system with exact numerical diagonalization. The fractional Chern insulator state equivalent to the 1/3 Laughlin state appears at 7/12 total filling ( 1/6 filling of the upper band). The state also features spontaneous ferromagnetism and is thus an example of the spontaneous breaking of a continuous symmetry along with a topological phase transition. We discuss light-driven graphene and shaken optical lattices as possible experimental systems that can realize such a state.
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页数:5
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