Heterostructures of skutterudites and germanium antimony tellurides - structure analysis and thermoelectric properties of bulk samples

被引:15
作者
Fahrnbauer, Felix [1 ]
Maier, Stefan [2 ]
Grundei, Martin [2 ]
Giesbrecht, Nadja [2 ]
Nentwig, Markus [1 ,2 ]
Rosenthal, Tobias [2 ]
Wagner, Gerald [1 ]
Snyder, G. Jeffrey [3 ,4 ]
Oeckler, Oliver [1 ]
机构
[1] Univ Leipzig, Inst Mineral Crystallog & Mat Sci, D-04275 Leipzig, Germany
[2] Univ Munich, Dept Chem, D-81377 Munich, Germany
[3] CALTECH, Mat Sci, Pasadena, CA 91125 USA
[4] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
关键词
REAL-STRUCTURE; DIFFRACTION; GETE; CRYSTAL; TRANSPORT;
D O I
10.1039/c5tc01509j
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Heterostructures of germanium antimony tellurides with skutterudite-type precipitates are promising thermoelectric materials due to low thermal conductivity and multiple ways of tuning their electronic transport properties. Materials with the nominal composition [CoSb2(GeTe)(0.5)](x)(GeTe)(10.5)Sb2Te3 (x = 0-2) contain nano-to microscale precipitates of skutterudite-type phases which are homogeneously distributed. Powder X-ray diffraction reveals that phase transitions of the germanium antimony telluride matrix depend on its GeTe content. These are typical for this class of materials; however, the phase transition temperatures are influenced by heterostructuring in a beneficial way, yielding a larger existence range of the intrinsically nanostructured pseudocubic structure of the matrix. Using microfocused synchrotron radiation in combination with crystallite pre-selection by means of electron microscopy, single crystals of the matrix as well as of the precipitates were examined. They show nano-domain twinning of the telluride matrix and a pronounced structure distortion in the precipitates caused by GeTe substitution. Thermoelectric figures of merit of 1.4 +/- 0.3 at 450 degrees C are observed. In certain temperature ranges, heterostructuring involves an improvement of up to 30% compared to the homogeneous material.
引用
收藏
页码:10525 / 10533
页数:9
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