Deep reactive ion etching of in situ boron doped LPCVD Ge0.7Si0.3 using SF6 and O2 plasma

被引：2

作者：

Kazmi, S. N. R. ^{[1
]}

Salm, C. ^{[1
]}

Schmitz, J. ^{[1
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 110卷

关键词：

Deep reactive ion etching; Ge0.7Si0.3; Etch selectivity; Resonator; ALLOYS; SILICON;

D O I：

10.1016/j.mee.2013.02.034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on deep reactive ion etching (DRIE) of in situ highly boron doped low pressure chemical vapor deposited Ge0.7Si0.3 alloy in SF6 and O-2 plasma. The effect of RF power, SF6 flow, O-2 flow and temperature on the etch rate of Ge0.7Si0.3 films with a boron concentration of 2.1 x 10(21) atoms/cm(3) is investigated. Optimized conditions for a combination of a vertical etch profile and a high selectivity towards PECVD oxide are reported. The effect of boron doping concentration on the etch rate is also investigated. The etch rate is found to decrease with an increase in the dopant concentration. The developed SF6 and O-2 based DRIE recipes are applied to fabricate GeSi microresonators. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：311 / 314

页数：4

共 18 条

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