Properties of Ta2O5 thin films prepared by ion-assisted deposition

被引：25

作者：

Farhan, Mansour S. ^{[1
]}

Zalnezhad, E. ^{[2
]}

Bushroa, A. R. ^{[2
]}

机构：

[1] Wasit Univ, Coll Engn, Kut, Iraq

[2] Univ Malaya, Ctr Adv Mfg & Mat Proc, Dept Engn Design & Manufacture, Fac Engn, Kuala Lumpur 50603, Malaysia

来源：

MATERIALS RESEARCH BULLETIN | 2013年 / 48卷 / 10期

关键词：

Thin films; Vapor deposition; Optical properties; OPTICAL-PROPERTIES;

D O I：

10.1016/j.materresbull.2013.06.068

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tantalum penta-oxide (Ta2O5) thin films were deposited onto highly polished and clean, fused silica glass substrates via ion beam-assisted deposition at room temperature using a high-vacuum coater equipped with an electron beam gun. The effects of ion beam parameters, oxygen flow rate, and deposition rate on the optical and structural properties as well as the stress of Ta2O5 films were studied. It has been revealed that Ta2O5 thin films deposited at 300 eV ion beam energy, 60 mu A/cm(2) ion current density, 20 sccm oxygen flow rate and 0.6 nm/s deposition rate demonstrated excellent optical, structural and compressive stress. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：4206 / 4209

页数：4

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