Dislocation Evolution and Migration at Grain Boundaries in Thermoelectric SnTe

被引：37
作者：
Wu, Di [1 ]
Chen, Xiang [2 ]
Zheng, Fengshan [3 ,4 ]
Du, Hongchu [3 ,4 ,5 ]
Jin, Lei [3 ,4 ]
Dunin-Borkowski, Rafal E. [3 ,4 ]
机构：
[1] Shaanxi Normal Univ, Key Lab Macromol Sci Shaanxi Prov, Shaanxi Key Lab Adv Energy Devices, Sch Mat Sci & Engn, Xian 710119, Shaanxi, Peoples R China
[2] Rhein Westfal TH Aachen, Mat Chem, D-52074 Aachen, Germany
[3] Forschungszentrum Julich, Ernst Ruska Ctr Microscopy & Spect Electrons, D-52425 Julich, Germany
[4] Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany
[5] Rhein Westfal TH Aachen, Cent Facil Electron Microscopy, D-52074 Aachen, Germany
来源：
ACS APPLIED ENERGY MATERIALS | 2019年 / 2卷 / 04期
关键词：
thermoelectric materials; SnTe; in-grain dislocations; grain boundary dislocations; charge carrier scattering; phonon scattering; HIGH-PERFORMANCE; THERMAL-CONDUCTIVITY; POLYCRYSTALLINE SNSE; PHONON-SCATTERING; PBTE; NANOSTRUCTURES; ORIGIN;
D O I：
10.1021/acsaem.9b00061
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The close relationship between sample preparation processes and microstructure can lead to significant variations in the electrical and thermal transport properties of materials. Here, we use (scanning) transmission electron microscopy to study differences in microstructure between Sn0.995In0.005Te samples that were synthesized by three different methods: water quenched ingot as cast (IAC); hand milled + spark plasma sintered pellet (HMS); and ball milled + spark plasma sintered pellet (BMS). We find that dislocations are relocated from within the grains in the IAC sample to form arrays of dislocations at grain boundaries in the HMS and BMS samples. We suggest that the locations and types of the dislocations affect the scattering of charge carriers and heat-carrying phonons and are responsible for the different thermoelectric behaviors of the samples. Our results may shed light on the relationship between sample synthesis, microstructure, and thermoelectric properties in such materials.
引用
收藏
页码：2392 / 2397
页数：11
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