Room-temperature near-band-edge photoluminescence from CuInSe2 heteroepitaxial layers grown by metalorganic vapor phase epitaxy

被引：33

作者：

Chichibu, S

机构：

[1] Faculty of Science and Technology, Science University of Tokyo, Noda, Chiba 278

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 14期

关键词：

D O I：

10.1063/1.118708

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High purity CuInSe2 heteroepitaxial layers were successfully grown by low-pressure metalorganic vapor phase epitaxy. A certain amount of excitonic absorption was found in the optical absorption spectra even at room temperature (RT). A predominant near-band-edge photoluminescence peak was observed at RT for the first time from a (001) oriented epilayer grown on a GaAs(001) substrate. The epilayers were grown in order to carry out a systematic investigation of intrinsic defects and intentional dopants in the matrix. (C) 1997 American Institute of Physics.

引用

页码：1840 / 1842

页数：3

共 19 条

[1] HETEROEPITAXY OF WIDE BANDGAP TERNARY SEMICONDUCTORS [J].

BACHMANN, KJ ;

XING, GC ;

SCROGGS, JS ;

TRAN, HT ;

ITO, K ;

CASTLEBERRY, H ;

WOOD, G .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 :133-138

[2]

BACHMANN KJ, 1993, JPN J APPL PHYS, V32, P10

[3]

CHICHIBU S, 1997, JPN J APPL PHYS, V36, P437

[4]

Chichibu S., 1996, CRYST RES TECHNOL, V31, pS333

[5] THE STRUCTURE OF CUINSE2 FILMS FORMED BY COEVAPORATION OF THE ELEMENTS [J].

DON, ER ;

HILL, R ;

RUSSELL, GJ .

SOLAR CELLS, 1986, 16 (1-4) :131-142

[6] EPITAXIAL-GROWTH OF CUINSE2 SINGLE-CRYSTAL BY HALOGEN TRANSPORT METHOD [J].

IGARASHI, O .

JOURNAL OF CRYSTAL GROWTH, 1993, 130 (3-4) :343-356

[7] EXCITONIC EMISSIONS FROM CUINSE2 ON GAAS(001) GROWN BY MOLECULAR-BEAM EPITAXY [J].

NIKI, S ;

SHIBATA, H ;

FONS, PJ ;

YAMADA, A ;

OBARA, A ;

MAKITA, Y ;

KURAFUJI, T ;

CHICHIBU, S ;

NAKANISHI, H .

APPLIED PHYSICS LETTERS, 1995, 67 (09) :1289-1291

[8] High quality CuInSe2 films grown on pseudo-lattice-matched substrates by molecular beam epitaxy [J].

Niki, S ;

Fons, PJ ;

Yamada, A ;

Kurafuji, T ;

Chichibu, S ;

Nakanishi, H ;

Bi, WG ;

Tu, CW .

APPLIED PHYSICS LETTERS, 1996, 69 (05) :647-649

[9] HETEROEPITAXY AND CHARACTERIZATION OF CUINSE2 ON GAAS(001) [J].

NIKI, S ;

MAKITA, Y ;

YAMADA, A ;

HELLMAN, O ;

FONS, PJ ;

OBARA, A ;

OKADA, Y ;

SHIODA, R ;

OYANAGI, H ;

KURAFUJI, T ;

CHICHIBU, S ;

NAKANISHI, H .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :1201-1205

[10]

OUCHIN F, 1996, CRYST RES TECHNOL, V31, pS513

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