Realization of silicon carbide sensors for measurements on gaseous working fluids

被引：5

作者：

Ballandovich, VS

Bogachev, SV

Ilyn, VA

Korlyakov, AV

Kostromin, SV

Luchinin, VV

Petrov, AA

机构：

[1] Microtechnology Center, St. Petersburg Electrotechnical U., 197376 St. Petersburg

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 46卷 / 1-3期

关键词：

temperature sensor; pressure sensor; gas and liquid flow sensor; SiC microtechnology; electrical characterization;

D O I：

10.1016/S0921-5107(97)00007-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A series of temperature, pressure, as well as gas or liquid flow sensors, working under extreme service conditions like high temperature, hostile environments, radiation has been carried out on the basis of a unified silicon carbide (SiC) technology. The different step include performing a low-temperature SiC epitaxy on an insulating substrate, performing a precise local dry etching using standard photoresist masks and achieving high-temperature contact fabrication. Details of these steps and corresponding applications are reviewed. (C) 1997 Elsevier Science B.V.

引用

页码：383 / 386

页数：4