Chemically Resolved Interface Structure of Epitaxial Graphene on SiC(0001)

被引:64
作者
Emery, Jonathan D. [1 ]
Detlefs, Blanka [2 ]
Karmel, Hunter J. [1 ]
Nyakiti, Luke O. [3 ]
Gaskill, D. Kurt [3 ]
Hersam, Mark C. [1 ,4 ]
Zegenhagen, Joerg [2 ]
Bedzyk, Michael J. [1 ,5 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[2] European Synchrotron Radiat Facil, F-38043 Grenoble 9, France
[3] US Naval Res Lab, Washington, DC 20375 USA
[4] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[5] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
基金
美国国家科学基金会;
关键词
ATOMIC-STRUCTURE; TRANSISTORS;
D O I
10.1103/PhysRevLett.111.215501
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Atomic-layer 2D crystals have unique properties that can be significantly modified through interaction with an underlying support. For epitaxial graphene on SiC(0001), the interface strongly influences the electronic properties of the overlaying graphene. We demonstrate a novel combination of x-ray scattering and spectroscopy for studying the complexities of such a buried interface structure. This approach employs x-ray standing wave-excited photoelectron spectroscopy in conjunction with x-ray reflectivity to produce a highly resolved chemically sensitive atomic profile for the terminal substrate bilayers, interface, and graphene layers along the SiC[0001] direction.
引用
收藏
页数:5
相关论文
共 34 条
[1]   Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics [J].
Berger, C ;
Song, ZM ;
Li, TB ;
Li, XB ;
Ogbazghi, AY ;
Feng, R ;
Dai, ZT ;
Marchenkov, AN ;
Conrad, EH ;
First, PN ;
de Heer, WA .
JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (52) :19912-19916
[2]   Electronic confinement and coherence in patterned epitaxial graphene [J].
Berger, Claire ;
Song, Zhimin ;
Li, Xuebin ;
Wu, Xiaosong ;
Brown, Nate ;
Naud, Cecile ;
Mayou, Didier ;
Li, Tianbo ;
Hass, Joanna ;
Marchenkov, Atexei N. ;
Conrad, Edward H. ;
First, Phillip N. ;
de Heer, Wait A. .
SCIENCE, 2006, 312 (5777) :1191-1196
[3]   Transmission electron microscopy and scanning tunneling microscopy investigations of graphene on 4H-SiC(0001) [J].
Borysiuk, J. ;
Bozek, R. ;
Strupinski, W. ;
Wysmolek, A. ;
Grodecki, K. ;
Stepniewski, R. ;
Baranowski, J. M. .
JOURNAL OF APPLIED PHYSICS, 2009, 105 (02)
[4]   Quasiparticle dynamics in graphene [J].
Bostwick, Aaron ;
Ohta, Taisuke ;
Seyller, Thomas ;
Horn, Karsten ;
Rotenberg, Eli .
NATURE PHYSICS, 2007, 3 (01) :36-40
[5]   Atomic structure of the 6H-SiC(0001) nanomesh [J].
Chen, W ;
Xu, H ;
Liu, L ;
Gao, XY ;
Qi, DC ;
Peng, GW ;
Tan, SC ;
Feng, YP ;
Loh, KP ;
Wee, ATS .
SURFACE SCIENCE, 2005, 596 (1-3) :176-186
[6]   Structural analysis of PTCDA monolayers on epitaxial graphene with ultra-high vacuum scanning tunneling microscopy and high-resolution X-ray reflectivity [J].
Emery, Jonathan D. ;
Wang, Qing Hua ;
Zarrouati, Marie ;
Fenter, Paul ;
Hersam, Mark C. ;
Bedzyk, Michael J. .
SURFACE SCIENCE, 2011, 605 (17-18) :1685-1693
[7]   Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study [J].
Emtsev, K. V. ;
Speck, F. ;
Seyller, Th. ;
Ley, L. ;
Riley, J. D. .
PHYSICAL REVIEW B, 2008, 77 (15)
[8]  
Emtsev KV, 2009, NAT MATER, V8, P203, DOI [10.1038/nmat2382, 10.1038/NMAT2382]
[9]   Disorder beneath epitaxial graphene on SiC(0001): An x-ray absorption study [J].
Gao, Xingyu ;
Chen, Shi ;
Liu, Tao ;
Chen, Wei ;
Wee, A. T. S. ;
Nomoto, T. ;
Yagi, S. ;
Soda, Kazuo ;
Yuhara, Junji .
PHYSICAL REVIEW B, 2008, 78 (20)
[10]   Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene [J].
Goler, Sarah ;
Coletti, Camilla ;
Piazza, Vincenzo ;
Pingue, Pasqualantonio ;
Colangelo, Francesco ;
Pellegrini, Vittorio ;
Emtsev, Konstantin V. ;
Forti, Stiven ;
Starke, Ulrich ;
Beltram, Fabio ;
Heun, Stefan .
CARBON, 2013, 51 :249-254