Methylammonium lead tribromide semiconductors: Ionizing radiation detection and electronic properties

被引：36

作者：

Lukosi, Eric ^{[1
]}

Smithn, Travis ^{[1
]}

Tisdale, Jeremy ^{[2
]}

Hamm, Daniel ^{[1
]}

Seal, Cody ^{[1
]}

Hu, Bin ^{[2
]}

Ahmadi, Mahshid ^{[2
]}

机构：

[1] Univ Tennessee, Dept Nucl Engn, Joint Inst Adv Mat, Knoxville, TN 37996 USA

[2] Univ Tennessee, Dept Mat Sci & Engn, Joint Inst Adv Mat, Knoxville, TN 37996 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2019年 / 927卷

关键词：

MAPbBr(3); MAPB; Alpha detection; Neutron detection; Semiconductor detector; Radiation detection; SINGLE-CRYSTALS; HALIDE; PHOTONS;

D O I：

10.1016/j.nima.2019.02.059

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The response of single crystal methylammonium lead tribromide (MAPbBr(3) or MAPB) semiconductors to alpha particles at low voltage is presented. Through analysis of the preamplifier traces induced by(210)Po alpha particles and collecting holes, we were able to determine the mobility-lifetime product, apparent mobility, trapping time constant, and the detrapping time constant. In addition, a quantitative study of the rate of positive polarization and device breakdown time at different applied voltages is presented. Finally, using a(239)Pu/Be fast neutron source, we were able to demonstrate the response of MAPB to fast neutrons for the first time via benchmarking experiment with Monte Carlo simulations.

引用

页码：401 / 406

页数：6

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