Estimation of low-dose-rate degradation on bipolar linear integrated circuits using switching experiments

被引：36
作者：
Boch, J [1 ]
Saigné, F
Schrimpf, RD
Vaillé, JR
Dusseau, L
Ducret, S
Bernard, M
Lorfèvre, E
Chatry, C
机构：
[1] Univ Montpellier 2, CEM2, F-34095 Montpellier 5, France
[2] Ctr Natl Etud Spatiales, F-31055 Toulouse, France
[3] Vanderbilt Univ, Nashville, TN 37235 USA
[4] TRAD, F-31319 Labege, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2005年 / 52卷 / 06期
关键词：
bipolar technology; dose rate; enhanced low-dose-rate sensitivity (ELDRS); integrated circuit; switching experiment; total dose; IONIZING-RADIATION;
D O I：
10.1109/TNS.2005.860711
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The low-dose-rate response of five bipolar integrated circuits is evaluated on the basis of switching experiments. Such experiments consist of performing first a high-dose-rate irradiation followed by a low-dose-rate irradiation. Based on these experiments, a time-saving method to predict the low-dose-rate degradation of bipolar linear microcircuits is proposed. This approach provides a good estimate of the low-dose-rate degradation.
引用
收藏
页码：2616 / 2621
页数：6
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