Estimation of low-dose-rate degradation on bipolar linear integrated circuits using switching experiments

被引：36

作者：

Boch, J ^{[1
]}

Saigné, F

Schrimpf, RD

Vaillé, JR

Dusseau, L

Ducret, S

Bernard, M

Lorfèvre, E

Chatry, C

机构：

[1] Univ Montpellier 2, CEM2, F-34095 Montpellier 5, France

[2] Ctr Natl Etud Spatiales, F-31055 Toulouse, France

[3] Vanderbilt Univ, Nashville, TN 37235 USA

[4] TRAD, F-31319 Labege, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2005年 / 52卷 / 06期

关键词：

bipolar technology; dose rate; enhanced low-dose-rate sensitivity (ELDRS); integrated circuit; switching experiment; total dose; IONIZING-RADIATION;

D O I：

10.1109/TNS.2005.860711

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The low-dose-rate response of five bipolar integrated circuits is evaluated on the basis of switching experiments. Such experiments consist of performing first a high-dose-rate irradiation followed by a low-dose-rate irradiation. Based on these experiments, a time-saving method to predict the low-dose-rate degradation of bipolar linear microcircuits is proposed. This approach provides a good estimate of the low-dose-rate degradation.

引用

收藏

页码：2616 / 2621

页数：6

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