0.12 μm transferred-substrate In0.52Al0.48As/In0.53Ga0.47As HEMTs on silicon wafer

被引：17

作者：

Bollaert, S ^{[1
]}

Wallaert, X ^{[1
]}

Lepilliet, S ^{[1
]}

Cappy, A ^{[1
]}

Jalaguier, E ^{[1
]}

Pocas, S ^{[1
]}

Aspar, B ^{[1
]}

机构：

[1] Inst Elect & Microelect Nord, Dept Hyperfrequences & Semicond, F-59652 Villeneuve Dascq, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 02期

关键词：

high electron mobility transistors (HEMTs); InAlAs/InGaAs; InP; transferred substrate;

D O I：

10.1109/55.981310

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New In0.52Al0.48As/In0.53Ga0.47As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2-in Silicon substrate with 0.12 mum T-shaped gate length. These new TS-HEMTs exhibit typical drain currents of 450 mA/mm and extrinsic transconductance up to 770 mS/mm. An extrinsic current gain cutoff frequency f(T) of 185 GHz is obtained. That result is the first reported for In0.52Al0.48As/In0.53Ga0.47As TS-HEMTs on Silicon substrate.

引用

页码：73 / 75

页数：3

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