Room-temperature 1.6 μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer

被引：88
作者：
Liu, HY [1 ]
Steer, MJ
Badcock, TJ
Mowbray, DJ
Skolnick, MS
Suarez, F
Ng, JS
Hopkinson, M
David, JPR
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Ctr Technol 3 5, Sheffield S1 3JD, S Yorkshire, England
[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 04期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1063/1.2173188
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is demonstrated that the emission of InAs quantum dots (QDs) capped with GaAsSb can be extended from 1.28 to 1.6 mu m by increasing the Sb composition of the capping layer from 14% to 26%. Photoluminescence excitation spectroscopy is applied to investigate the nature of this large redshift. The dominant mechanism is shown to be the formation of a type-II transition between an electron state in the InAs QDs and a hole state in the GaAsSb capping layer. The prospects for using these structures to fabricate 1.55 mu m injection lasers are discussed. (c) 2006 American Institute of Physics.
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页数：3
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  • [1] 2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer
    Balakrishnan, G
    Huang, S
    Rotter, TJ
    Stintz, A
    Dawson, LR
    Malloy, KJ
    Xu, H
    Huffaker, DL
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (12) : 2058 - 2060
  • [2] Characteristics of GaAsSb single-quantum-well-lasers emitting near 1.3 μm
    Blum, O
    Klem, JF
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (07) : 771 - 773
  • [3] InAs/GaAs quantum dots optically active at 1.5 μm
    da Silva, MJ
    Quivy, AA
    Martini, S
    Lamas, TE
    da Silva, ECF
    Leite, JR
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (16) : 2646 - 2648
  • [4] Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots
    Heitz, R
    Grundmann, M
    Ledentsov, NN
    Eckey, L
    Veit, M
    Bimberg, D
    Ustinov, VM
    Egorov, AY
    Zhukov, AE
    Kopev, PS
    Alferov, ZI
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (03) : 361 - 363
  • [5] Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser
    Huang, XD
    Stintz, A
    Hains, CP
    Liu, GT
    Cheng, J
    Malloy, KJ
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (03) : 227 - 229
  • [6] High performance quantum dot lasers on GaAs substrates operating in 1.5μm range
    Ledentsov, NN
    Kovsh, AR
    Zhukov, AE
    Maleev, NA
    Mikhrin, SS
    Vasil'ev, AP
    Sernenova, ES
    Maximov, MV
    Shernyakov, YM
    Kryzhanovskaya, N
    Ustinov, V
    Bimberg, D
    [J]. ELECTRONICS LETTERS, 2003, 39 (15) : 1126 - 1128
  • [7] Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer
    Liu, HY
    Steer, MJ
    Badcock, TJ
    Mowbray, DJ
    Skolnick, MS
    Navaretti, P
    Groom, KM
    Hopkinson, M
    Hogg, RA
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (14) : 1 - 3
  • [8] High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents
    Liu, HY
    Childs, DT
    Badcock, TJ
    Groom, KM
    Sellers, IR
    Hopkinson, M
    Hogg, RA
    Robbins, DJ
    Mowbray, DJ
    Skolnick, MS
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (06) : 1139 - 1141
  • [9] Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers:: Enhancement of the high-temperature photoluminescence intensity
    Liu, HY
    Sellers, IR
    Hopkinson, M
    Harrison, CN
    Mowbray, DJ
    Skolnick, MS
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (18) : 3716 - 3718
  • [10] Tuning the structural and optical properties of 1.3-μm InAs/GaAs quantum dots by a combined InAlAs and GaAs strained buffer layer
    Liu, HY
    Hopkinson, M
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (21) : 3644 - 3646
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