Photomask Effect in Organic Solar Cells With ZnO Cathode Buffer Layer

被引:3
作者
Kim, Hyeong Pil [1 ]
Ryu, Mi Sun [2 ]
Youn, Jun Ho [1 ]
Yusoff, Abd Rashid bin Mohd [1 ]
Jang, Jin [1 ]
机构
[1] Kyung Hee Univ, Seoul 130701, South Korea
[2] TAKOMA Technol & Co Ltd, Taejon 320922, South Korea
关键词
Conventional structure; metal-oxide-semiconductor; organic solar cells (OSCs); polymer:fullerene; solgel;
D O I
10.1109/LED.2012.2207877
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this letter, we report on the performance of conventional bulk heterojunction organic solar cell (OSC) incorporating a solution-processed zinc oxide (ZnO) spin coated on the photoactive layer regioregular poly(3-hexylthiophene) : indene-C-60 bis adduct. We show a significant improvement in short-circuit current density (J(sc)) upon an introduction of ZnO, and this is further evidenced by the reduction of J(sc) leading to a lower PCE in the device without the presence of ZnO. Furthermore, we also examined the "photomask" on the performance of ZnO-based device yielding a decrease in both J(sc) and open-circuit voltage V-oc (of about 13.42% and 0.73%, respectively) but an increase in filling factor. Results demonstrate that ZnO plays an important role in the improvement of OSCs' performance.
引用
收藏
页码:1480 / 1482
页数:3
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