Numerical simulation of QD-intermediate band solar cells: effect of dot size on performance

被引:0
作者
Bald, Timothy [1 ]
Fedoseyev, Alexander [1 ]
机构
[1] CFDRC, Huntsville, AL 35805 USA
来源
PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES | 2012年 / 8256卷
关键词
Quantum dot; photogeneration; detailed balance; numerical simulation; EFFICIENCY; ABSORPTION; OVERLAP;
D O I
10.1117/12.909142
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In this work, we present a Quantum Dot Intermediate Band Solar Cell (QD-IBSC) photogeneration model that is based on detailed balance principles. The 3D Schrodinger equation is solved for a regimented array of cubic quantum dots known as a Quantum Dot Crystal (QDC). Energy levels used in the simulation are derived from the dispersion relation. We consider only the dispersion relation along the [100] quasi-crystallographic direction. Absorption coefficients used were assumed to be constant and non-overlapping for each energy transition. Various JV curves were simulated for different dot sizes for the InAs0.9N0.1/GaAs0.98Sb0.02 dot/host system. This material system was chosen due to its property of a negligible valance band offset. The negligible valance band offset offers more feasibility for the isolation of the intermediate band. Simulations were done under a non-concentrated 6000K black body spectrum at a cell temperature of 300K. Performance parameters for each IV curve were calculated in order to ascertain the effect of dot size on performance from a fundamental level. Results show that for a fixed dot separation of 2nm, cell efficiency increases to 36.7% as the dot size is increased to 3.5 nm, but begins to decrease for larger dot sizes.
引用
收藏
页数:7
相关论文
共 15 条
[1]   Influence of the overlap between the absorption coefficients on the efficiency of the intermediate band solar cell [J].
Cuadra, L ;
Martí, A ;
Luque, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (06) :1002-1007
[2]   Effects of absorption coefficients and intermediate-band filling in InAs/GaAs quantum dot solar cells [J].
Hu, W. G. ;
Inoue, T. ;
Kojima, O. ;
Kita, T. .
APPLIED PHYSICS LETTERS, 2010, 97 (19)
[3]   Nanostructured photovoltaics for space power [J].
Hubbard, Seth M. ;
Bailey, Christopher ;
Polly, Stephen ;
Cress, Cory ;
Andersen, John ;
Forbes, David ;
Raffaelle, Ryne .
JOURNAL OF NANOPHOTONICS, 2009, 3
[4]   Electron and phonon energy spectra in a three-dimensional regimented quantum dot superlattice [J].
Lazarenkova, OL ;
Balandin, AA .
PHYSICAL REVIEW B, 2002, 66 (24) :1-9
[5]   Miniband formation in a quantum dot crystal [J].
Lazarenkova, OL ;
Balandin, AA .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) :5509-5515
[6]   Quantum dot intermediate band solar cell material systems with negligable valence band offsets [J].
Levy, MY ;
Honsberg, C ;
Marti, A ;
Luque, A .
Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005, 2005, :90-93
[7]   Operation of the intermediate band solar cell under nonideal space charge region conditions and half filling of the intermediate band [J].
Luque, A. ;
Marti, A. ;
Lopez, N. ;
Antolin, E. ;
Canovas, E. ;
Stanley, C. ;
Farmer, C. ;
Diaz, P. .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (09)
[8]   Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels [J].
Luque, A ;
Marti, A .
PHYSICAL REVIEW LETTERS, 1997, 78 (26) :5014-5017
[9]   New Hamiltonian for a better understanding of the quantum dot intermediate band solar cells [J].
Luque, A. ;
Marti, A. ;
Antolin, E. ;
Linares, P. G. ;
Tobias, I. ;
Ramiro, I. ;
Hernandez, E. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (08) :2095-2101
[10]   Quasi-drift diffusion model for the quantum dot intermediate band solar cell [J].
Martí, A ;
Cuadra, L ;
Luque, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (09) :1632-1639