Self-assembled endotaxial α-FeSi2 nanowires with length tunability mediated by a thin nitride layer on (001)Si

被引：18

作者：

Chen, SY ^{[1
]}

Chen, HC ^{[1
]}

Chen, LJ ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 19期

关键词：

D O I：

10.1063/1.2202701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Endotaxial growth of self-assembled alpha-FeSi2 nanowires (NWs) on (100)Si has been achieved by combining reactive deposition epitaxy and nitride-mediated epitaxy. The length and the length/width aspect ratio of metallic alpha-FeSi2 NWs could be increased more than 12 and 6 folds to 2 mu m, and 200 respectively, with a narrow width of 5-10 nm after prolonged annealing. The adjustment capability is attributed to the diminished flux of Fe adatoms mediated by the Si3N4 barrier layer to allow more complete shape transition. The scheme represents a degree of control on the morphology of self-assembled epitaxial silicide NWs not achievable otherwise. (c) 2006 American Institute of Physics.

引用

页数：3

共 23 条

[1] Interfacial interactions at Au/Si3N4/Si(111) and Ni/Si3N4/Si(111) structures with ultrathin nitride films [J].

Aballe, L ;

Gregoratti, L ;

Barinov, A ;

Kiskinova, M ;

Clausen, T ;

Gangodadhyay, S ;

Falta, J .

APPLIED PHYSICS LETTERS, 2004, 84 (24) :5031-5033

[2] EPITAXIAL-GROWTH OF TRANSITION-METAL SILICIDES ON SILICON [J].

CHEN, LJ ;

TU, KN .

MATERIALS SCIENCE REPORTS, 1991, 6 (2-3) :53-140

[3] Nitride-mediated epitaxy of self-assembled NiSi2 nanowires on (001)Si -: art. no. 253111 [J].

Chen, SY ;

Chen, LJ .

APPLIED PHYSICS LETTERS, 2005, 87 (25) :1-3

[4] Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001) [J].

Chen, Y ;

Ohlberg, DAA ;

Medeiros-Ribeiro, G ;

Chang, YA ;

Williams, RS .

APPLIED PHYSICS LETTERS, 2000, 76 (26) :4004-4006

[5] Nanowires of four epitaxial hexagonal silicides grown on Si(001) [J].

Chen, Y ;

Ohlberg, DAA ;

Williams, RS .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (05) :3213-3218

[6] INTERFACIAL REACTIONS OF IRON THIN-FILMS ON SILICON [J].

CHENG, HC ;

YEW, TR ;

CHEN, LJ .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5246-5250

[7] BONDING STATE OF SILICON SEGREGATED TO ALPHA-IRON SURFACES AND ON IRON SILICIDE SURFACES STUDIED BY ELECTRON-SPECTROSCOPY [J].

EGERT, B ;

PANZNER, G .

PHYSICAL REVIEW B, 1984, 29 (04) :2091-2101

[8] Endotaxial silicide nanowires [J].

He, ZA ;

Smith, DJ ;

Bennett, PA .

PHYSICAL REVIEW LETTERS, 2004, 93 (25) :256102-1

[9] Epitaxial titanium silicide islands and nanowires [J].

He, ZA ;

Stevens, M ;

Smith, DJ ;

Bennett, PA .

SURFACE SCIENCE, 2003, 524 (1-3) :148-156

[10] Self-limiting growth of strained faceted islands [J].

Jesson, DE ;

Chen, G ;

Chen, KM ;

Pennycook, SJ .

PHYSICAL REVIEW LETTERS, 1998, 80 (23) :5156-5159

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