TiO2 Thin Film Transistor by Atomic Layer Deposition

被引：8
|
作者：
Okyay, Ali K. [1 ,2 ]
Oruc, Feyza B. [2 ]
Cimen, Furkan [1 ,2 ]
Aygun, Levent E. [1 ,2 ]
机构：
[1] Bilkent Univ, Dept Elect & Elect Engn, TR-06800 Ankara, Turkey
[2] Bilkent Univ, UNAM, Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey
来源：
OXIDE-BASED MATERIALS AND DEVICES IV | 2013年 / 8626卷
关键词：
Atomic Layer Deposition; Thin Film Transistors; Titanium Dioxide; Transparent Electronics;
D O I：
10.1117/12.2005528
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, TiO2 films were deposited using thermal Atomic Layer Deposition (ALD) system. It is observed that as-deposited ALD TiO2 films are amorphous and not suitable as TFT channel material. In order to use the film as channel material, a post-annealing process is needed. Annealed films transform into a polycrystalline form containing mixed anatase and rutile phases. For this purpose, devices are annealed at 475 degrees C and observed that their threshold voltage value is 6.5(V), subthreshold slope is 0.35 V/dec, Ion/Ioff ratios 2.5x10(6) and mobility value is 0.672 cm(2)/V.s. Optical response measurements showed that devices exhibits decent performance at ultraviolet region where TiO2 has band to band absorption mechanism.
引用
收藏
页数：7
相关论文
共 50 条
  • [41] Ultrathin InGaO Thin Film Transistors by Atomic Layer Deposition
    Zhang, Jie
    Zheng, Dongqi
    Zhang, Zhuocheng
    Charnas, Adam
    Lin, Zehao
    Ye, Peide D. D.
    IEEE ELECTRON DEVICE LETTERS, 2023, 44 (02) : 273 - 276
  • [42] Synthesis of anatase and rutile phases of TiO2 by atomic layer deposition: substrate effect
    Pessoa, R. S.
    Pereira, F. P.
    Testoni, G. E.
    Chiappim, W.
    Maciel, H. S.
    Santos, L. V.
    2014 29TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 2014,
  • [43] Controlling the grain size of polycrystalline TiO2 films grown by atomic layer deposition
    Piltaver, Ivna Kavre
    Peter, Robert
    Saric, Iva
    Salamon, Kresimir
    Badovinac, Ivana Jelovica
    Koshmak, Konstantin
    Nannarone, Stefano
    Marion, Ida Delac
    Petravic, Mladen
    APPLIED SURFACE SCIENCE, 2017, 419 : 564 - 572
  • [44] Role of HCl in Atomic Layer Deposition of TiO2 Thin Films from Titanium Tetrachloride and Water
    Leem, Jina
    Park, Inhye
    Li, Yinshi
    Zhou, Wenhao
    Jin, Zhenyu
    Shin, Seokhee
    Min, Yo-Sep
    BULLETIN OF THE KOREAN CHEMICAL SOCIETY, 2014, 35 (04) : 1195 - 1201
  • [45] Atomic layer deposition of SnOx onto mesoporous, nanocrsytalline TiO2 and SnO2 thin films
    Mortelliti, Michael J.
    Wang, Annie N.
    Dempsey, Jillian L.
    POLYHEDRON, 2019, 171 : 433 - 447
  • [46] Characterisation of epitaxial TiO2 thin films grown on MgO(001) using atomic layer deposition
    Mitchell, DRG
    Attard, DJ
    Triani, G
    JOURNAL OF CRYSTAL GROWTH, 2005, 285 (1-2) : 208 - 214
  • [47] Atomic Layer Deposition of Undoped TiO2 Exhibiting p-Type Conductivity
    Iancu, Andrei T.
    Logar, Manca
    Park, Joonsuk
    Prinz, Fritz B.
    ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (09) : 5134 - 5140
  • [48] Corrosion resistance of TiO2 films grown on stainless steel by atomic layer deposition
    Shan, C. X.
    Hou, Xianghui
    Choy, Kwang-Leong
    SURFACE & COATINGS TECHNOLOGY, 2008, 202 (11) : 2399 - 2402
  • [49] Gallium-incorporated TiO2 thin films by atomic layer deposition for future electronic devices
    Sun, Qingxuan
    Lin, Yingzhen
    Han, Chaoya
    Yang, Ze
    Li, Ying
    Zeng, Yuping
    Yang, Weifeng
    Zhang, Jie
    FRONTIERS IN MATERIALS, 2024, 11
  • [50] Thermal properties of TiO2 films fabricated by atomic layer deposition
    Saleem, Muhammad Rizwan
    Honkanen, Seppo
    Turunen, Jari
    13TH INTERNATIONAL SYMPOSIUM ON ADVANCED MATERIALS (ISAM 2013), 2014, 60
12345