TiO2 Thin Film Transistor by Atomic Layer Deposition

被引：8
作者：
Okyay, Ali K. [1 ,2 ]
Oruc, Feyza B. [2 ]
Cimen, Furkan [1 ,2 ]
Aygun, Levent E. [1 ,2 ]
机构：
[1] Bilkent Univ, Dept Elect & Elect Engn, TR-06800 Ankara, Turkey
[2] Bilkent Univ, UNAM, Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey
来源：
OXIDE-BASED MATERIALS AND DEVICES IV | 2013年 / 8626卷
关键词：
Atomic Layer Deposition; Thin Film Transistors; Titanium Dioxide; Transparent Electronics;
D O I：
10.1117/12.2005528
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, TiO2 films were deposited using thermal Atomic Layer Deposition (ALD) system. It is observed that as-deposited ALD TiO2 films are amorphous and not suitable as TFT channel material. In order to use the film as channel material, a post-annealing process is needed. Annealed films transform into a polycrystalline form containing mixed anatase and rutile phases. For this purpose, devices are annealed at 475 degrees C and observed that their threshold voltage value is 6.5(V), subthreshold slope is 0.35 V/dec, Ion/Ioff ratios 2.5x10(6) and mobility value is 0.672 cm(2)/V.s. Optical response measurements showed that devices exhibits decent performance at ultraviolet region where TiO2 has band to band absorption mechanism.
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页数：7
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