Feasibility analysis of junction temperature measurement for GaN-based high-power white LEDs by the peak-shift method

被引：6

作者：

Zhang, Jingjing ^{[1
]}

Zhang, Tao ^{[1
,2
]}

Liu, Shishen ^{[1
,2
]}

Yuan, Shidong ^{[1
,2
]}

Jin, Yafang ^{[3
]}

Yang, Sheng ^{[3
,4
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China

[2] Natl Ctr Qual Inspect & Supervis LED Prod, Changzhou 213001, Peoples R China

[3] Changzhou Inst Optoelect Technol, Changzhou 213164, Peoples R China

[4] Nanjing Univ Sci & Technol, Sch Elect Engn & Optoelect Technol, Nanjing 210094, Jiangsu, Peoples R China

来源：

CHINESE OPTICS LETTERS | 2013年 / 11卷 / 09期

关键词：

D O I：

10.3788/COL201311.091204

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Transient thermal impedance of GaN-based high-power white light emitting diodes (LEDs) is created using a thermal transient tester. An electro-thermal simulation shows that LED junction temperature (JT) rises to a very low degree under low duty cycle pulsed current. At the same JT, emission peaks are equivalent at pulsed and continuous currents. Moreover, the difference in peak wavelength when a LED is driven by pulsed and continuous currents initially decreases then increases with increasing pulse width. Thus, selecting an appropriate pulse width decreases errors in JT measurement.

引用

页数：3