Bulk and surface sensitive high-resolution photoemission study of Mott-Hubbard systems SrVO3 and CaVO3

被引:5
作者
Eguchi, R.
Kiss, T.
Tsuda, S.
Shimojima, T.
Mizokami, T.
Chainani, A.
Shin, S.
Inoue, I. H.
Togashi, T.
Watanabe, S.
Zhang, C. Q.
Chen, C. T.
Arita, M.
Shimada, K.
Namatame, H.
Taniguchi, M.
机构
[1] Univ Tokyo, ISSP, Kashiwa, Chiba 2778581, Japan
[2] AIST, CERC, Tsukuba, Ibaraki 3058562, Japan
[3] Chinese Acad Sci, Beijing Ctr Crystal R&D, Beijing 100080, Peoples R China
[4] Hiroshima Univ, Hiroshima Synchotron Radiat Ctr, Higashihiroshima, Hiroshima 7398526, Japan
[5] Hiroshima Univ, Grad Sch Sci, Higashihiroshima, Hiroshima 7398526, Japan
关键词
SrVO3; CaVO3; bulk sensitive photoemission; Mott-Hubbard systems;
D O I
10.1016/j.physb.2006.01.120
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We study the electronic structure of Mott-Hubbard systems SrVO3 and CaVO3 with bulk and surface sensitive high-resolution photoemission spectroscopy using low-energy photons (hv = 7-21 eV), including a VUV laser. A clear suppression of the density of states within similar to 0.2 eV of the Fermi level (E-F) is found. The coherent band in SrVO3 and CaVO3 is shown to consist of surface and bulk-derived features. The results indicate that the stronger distortion on the surface of CaVO3 compared to SrVO3 is directly reflected in the coherent DOS at EF, consistent with recent theory. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:330 / 331
页数:2
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