Amorphous selenium thin films prepared using chemical bath deposition: optimization of the deposition process and characterization

被引:36
作者
Bindu, K [1 ]
Lakshmi, M
Bini, S
Kartha, CS
Vijayakumar, KP
Abe, T
Kashiwaba, Y
机构
[1] Cochin Univ Sci & Technol, Dept Phys, Cochin 682022, Kerala, India
[2] Iwate Univ, Dept Elect & Elect Engn, Morioka, Iwate 0208551, Japan
关键词
D O I
10.1088/0268-1242/17/3/316
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Amorphous selenium films were prepared at room temperature using the simple and safe method of chemical bath deposition. This was achieved with an acidified solution of Na2SeSO3 at a pH value of 4.5. In order to confirm the formation of amorphous selenium (a-Se), samples were characterized using x-ray diffraction, x-ray photoelectron spectroscopy, secondary ion mass spectroscopy and optical absorption studies. The optical bandgap of the material was found to be 2.09 eV. Indium selenide could be prepared by annealing this a-Se in a multilayer structure glass/SnO2/a-Se/In.
引用
收藏
页码:270 / 274
页数:5
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