Ge-modified Si(100) substrates for the growth of 3C-SiC(100)

被引：24

作者：

Zgheib, Ch.

McNeil, L. E.

Masri, P.

Foerster, Ch.

Morales, F. M.

Stauden, Th.

Ambacher, O.

Pezoldt, J.

机构：

[1] Univ Notre Dame, Dept Elect Engn, Zouk Mosbeh 22114501, Lebanon

[2] Univ N Carolina, Dept Phys & Astron, Chapel Hill, NC 27599 USA

[3] Univ Montpellier 2, Grp Etudes Semicond, CNRS, GES,UMR 5650, F-34095 Montpellier, France

[4] TU Ilmenau, Dept Nanotechnol, Ctr Micro & Nanotechnol, D-98684 Ilmenau, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 21期

关键词：

D O I：

10.1063/1.2206558

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An alternative route to improve the epitaxial growth of 3C-SiC(100) on Si(100) was developed. It consists in covering the silicon wafers with germanium prior to the carbonization step of the silicon substrate. Transmission electron microscopy and mu-Raman investigations revealed an improvement in the residual strain and crystalline quality of the grown 3C-SiC layers comparable to or better than in the case of 3C-SiC grown on silicon on insulator substrates. These beneficial effects were reached by using a Ge coverage in the range of 0.5-1 monolayer. (c) 2006 American Institute of Physics.

引用

页数：3

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