Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3)-semiconductor capacitors for nonvolatile memory applications - art. no. 072917

Metal-ferroelectric-insulator-semiconductor capacitors with Pb(Zr-0.53,Ti-0.47)O-3 (PZT) ferroelectric layer and dysprosium oxide (Dy2O3) insulator layer were fabricated and characterized. The measured memory window of 0.86 V was close to the theoretical value Delta W approximate to 2d(f)E(c)approximate to 0.78 V at a sweep voltage of 8 V. The size of the memory window as a function of PZT film thickness was discussed. The C-V flatband voltage shift (Delta V-FB) as function of charge injection was also studied. An energy band diagram of the Al/PZT/Dy2O3/p-Si system was proposed to explain the memory window and flatband voltage shift. The charge injection is mainly due to electrons.