Field-effect active plasmonics for ultracompact electro-optic switching

被引：29

作者：

Cetin, Arif E. ^{[1
,2
]}

Yanik, Ahmet A. ^{[3
,4
]}

Mertiri, Alket ^{[2
,5
]}

Erramilli, Shyamsunder ^{[2
,5
,6
]}

Mustecaplioglu, Ozgur E. ^{[7
]}

Altug, Hatice ^{[1
,2
,5
]}

机构：

[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

[2] Boston Univ, Photon Ctr, Boston, MA 02215 USA

[3] Massachusetts Gen Hosp, Ctr Engn Med, Boston, MA 02129 USA

[4] Harvard Univ, Sch Med, Boston, MA 02129 USA

[5] Boston Univ, Div Mat Sci & Engn, Boston, MA 02215 USA

[6] Boston Univ, Dept Phys & Biomed Engn, Boston, MA 02215 USA

[7] Koc Univ, Dept Phys, TR-34450 Istanbul, Turkey

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 12期

基金：

美国国家科学基金会;

关键词：

SURFACE-PLASMONS; MODULATION;

D O I：

10.1063/1.4754139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Merging of electronics and photonics at subwavelength dimensions could potentially allow development of ultracompact electro-optic modulators and active optical interconnects. Here, we introduce a field-effect active plasmonic modulator where the metallic ring serves as both a photonic resonator and a field electrode. By exploiting the simultaneous electronic and photonic functionalities of our plasmonic device, we show devices offering significantly improved modulation depths (as high as similar to 10.85 dB) compared to active dielectric micro-ring resonators. Device concepts introduced in this work are applicable in realization of various integrated components and could play an important role in development of active plasmonic circuits. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754139]

引用

页数：4

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