Interface structures and strain relaxation mechanisms of ferroelectric BaTiO3/SrTiO3 multilayers on (001) MgO substrates

被引：4

作者：

Ding, Ying ^{[1
,2
]}

Chen, Jianghua ^{[1
,2
]}

He, Junming ^{[3
]}

Liu, Ming ^{[4
]}

Ma, Chunrui ^{[3
]}

Chen, Chonglin ^{[4
,5
]}

机构：

[1] Hunan Univ, Coll Mat Sci & Engn, Ctr High Resolut Electron Microscopy, Changsha 410082, Hunan, Peoples R China

[2] Hunan Univ, Hunan Prov Key Lab Spray Deposit Technol & Applic, Changsha 410082, Hunan, Peoples R China

[3] Changsha Univ Sci & Technol, Coll Chem & Biol Engn, Changsha 410076, Hunan, Peoples R China

[4] Univ Texas San Antonio, Dept Phys & Astron, San Antonio, TX 78249 USA

[5] Univ Houston, Texas Ctr Supercond, Houston, TX 77204 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 383卷

基金：

中国国家自然科学基金; 美国国家科学基金会;

关键词：

Characterization; Defects; Growth models; Pulsed laser deposition; Perovskites; Ferroelectric materials; MICROWAVE DIELECTRIC-PROPERTIES; BA0.5SR0.5TIO3; THIN-FILMS; EPITAXIAL BATIO3 FILMS; GROWTH; SRTIO3; MICROSTRUCTURE; DEFECTS;

D O I：

10.1016/j.jcrysgro.2013.08.003

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Interface structures and strain relaxation mechanisms of ferroelectric BaTiO3/SrTiO3 multilayers on (001) MgO substrates were systematically studied by electron microscopy. The multilayers are formed in bilayered structures with different growth morphologies. (i) The lower layer with single crystallinity is an epitaxial layer on the MgO substrate. Defects such as misfit dislocations, anti-phase boundaries, and stacking faults reveal in this layer, acting as a strain relaxation mechanism and (ii) the upper layer is the rest of the multilayer, exhibiting a highly textured columnar structure with small angle boundaries. The columnar grains are formed by local epitaxial growth within individual grains. The strain-relaxation mechanisms are established to understand the growth dynamics of the multilayers. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：19 / 24

页数：6

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