Structures, stabilities, and electronic properties of F-doped Sin (n=1 ∼ 12) clusters: Density functional theory investigation

被引:6
作者
Zhang Shuai [1 ]
Jiang Hua-Long [1 ]
Wang Ping [1 ]
Lu Cheng [1 ]
Li Gen-Quan [1 ]
Zhang Ping [1 ]
机构
[1] Nanyang Normal Univ, Phys & Elect Engn Coll, Nanyang 473061, Peoples R China
基金
中国国家自然科学基金;
关键词
FSin cluster; density-functional theory; geometrical structures; electronic properties; PHOTOELECTRON-SPECTROSCOPY; SILICON CLUSTERS; STATES; GEOMETRIES;
D O I
10.1088/1674-1056/22/12/123601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The geometries, stabilities, and electronic properties of FSin (n = 1 similar to 12) clusters are systematically investigated by using first-principles calculations based on the hybrid density-functional theory at the B3LYP/6-311G level. The geometries are found to undergo a structural change from two-dimensional to three-dimensional structure when the cluster size n equals 3. On the basis of the obtained lowest-energy geometries, the size dependencies of cluster properties, such as averaged binding energy, fragmentation energy, second-order energy difference, HOMO-LUMO (highest occupied molecular orbital-lowest unoccupied molecular orbital) gap and chemical hardness, are discussed. In addition, natural population analysis indicates that the F atom in the most stable FSin cluster is recorded as being negative and the charges always transfer from Si atoms to the F atom in the FSin clusters.
引用
收藏
页数:8
相关论文
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