Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition

被引：24
作者：
Li, Jiun-Yun [1 ,2 ]
Huang, Chiao-Ti [1 ,2 ]
Rokhinson, Leonid P. [3 ]
Sturm, James C. [1 ,2 ]
机构：
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[2] Princeton Univ, Princeton Inst Sci & Technol Mat, Princeton, NJ 08544 USA
[3] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 16期
关键词：
D O I：
10.1063/1.4824729
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Both depletion-mode and enhancement-mode two-dimensional electron gases (2DEGs) in isotopically enriched Si-28 with extremely high mobility (522 000 cm(2)/V s) are presented. The samples were grown by chemical vapor deposition using enriched silane. The fraction of the spin-carrying isotope Si-29 was reduced to the level of 800 ppm by 28 Si enrichment, with the electron spin dephasing time expected to be as long as 2 mu s. Remote impurity charges from ionized dopants and the Si/Al2O3 interface were suggested to be the dominant source for electron scattering in the enriched Si-28 2DEGs. (C) 2013 AIP Publishing LLC.
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