Photoelectrode thin film of dye-sensitized solar cell fabricated by anodizing method and spin coating and electrochemical impedance properties of DSSC

被引:30
作者
Chang, Ho [1 ]
Chen, Chih-Hao [2 ,3 ]
Kao, Mu-Jung [4 ]
Chien, Shu-Hua [5 ]
Chou, Cheng-Yi [1 ]
机构
[1] Natl Taipei Univ Technol, Grad Inst Mfg Technol, Taipei 10608, Taiwan
[2] Mackay Mem Hosp, Dept Thorac Surg, Taipei 10419, Taiwan
[3] Natl Taipei Univ Technol, Grad Inst Mech & Elect Engn, Taipei 10608, Taiwan
[4] Natl Taipei Univ Technol, Dept Vehicle Engn, Taipei 10608, Taiwan
[5] Acad Sinica, Inst Chem, Taipei 115, Taiwan
关键词
TiO2; nanotube (TNT); Anodizing method; Dye-sensitized solar cell (DSSC); Electrochemical impedance; TIO2 NANOTUBE ARRAYS; EFFICIENCY;
D O I
10.1016/j.apsusc.2012.12.132
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The paper studies the photoelectrode thin film of dye-sensitized solar cell (DSSC) fabricated by anodizing method, explores the structure and properties of the fabricated photoelectrode thin film, measures the photoelectric conversion efficiency of DSSC, and finds the electrochemical impedance properties of DSSCs assembled by photoelectrode thin films in different thicknesses. Besides, in order to increase the specific surface area of nanotubes, this paper deposits TiO2 nanoparticles (TNP) on the surface of titanium oxide nanotube (TNT). As shown in experimental results, the photoelectric conversion efficiency of the DSSC fabricated by the study rises to 6.5% from the original 5.43% without TnB treatment, with an increase of photoelectric conversion efficiency by 19.7%. In addition, when the photoelectrode thin film is fabricated with mixture of TNTs and TNP in an optimal proportion of 2:8 and the photoelectrode thin film thickness is 15.5 mu m, the photoelectric conversion efficiency can reach 7.4%, with an increase of 36.7% from the original photoelectric conversion efficiency at 5.43%. Besides, as found in the results of electrochemical impedance analysis, the DSSC with photoelectrode thin film thickness at 15.5 mu m has the lowest charge-conduction resistance (R-k) value 9.276 Omega of recombined electron and conduction resistance (R-w) value 3.25 Omega of electrons in TiO2. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:252 / 257
页数:6
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