Interband Effects on Hot Carrier Relaxation in Titanium Nitride Films

被引：0
|
作者：
Ferguson, H. [1 ]
Guler, U. [2 ]
Kinsey, N. [2 ,3 ,4 ]
Shalacv, V. M. [2 ]
Norris, T. [1 ]
Boltasseva, A. [2 ]
机构：
[1] Univ Michigan, Elect Engn, Ann Arbor, MI 48109 USA
[2] Virginia Commonwealth Univ, Elect & Comp Engn, Med Coll Virginia Campus, Richmond, VA 23284 USA
[3] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[4] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
来源：
2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hot carrier cooling rates were measured using transmission pump-probe on 30nm TiN films. Experiments used a 400nm pump/800nm probe and a 650nm pump/800nm probe. The bandstructure gives insight into the long cooling times observed.
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页数：2
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