Interband Effects on Hot Carrier Relaxation in Titanium Nitride Films

被引：0
|
作者：
Ferguson, H. [1 ]
Guler, U. [2 ]
Kinsey, N. [2 ,3 ,4 ]
Shalacv, V. M. [2 ]
Norris, T. [1 ]
Boltasseva, A. [2 ]
机构：
[1] Univ Michigan, Elect Engn, Ann Arbor, MI 48109 USA
[2] Virginia Commonwealth Univ, Elect & Comp Engn, Med Coll Virginia Campus, Richmond, VA 23284 USA
[3] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[4] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
来源：
2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hot carrier cooling rates were measured using transmission pump-probe on 30nm TiN films. Experiments used a 400nm pump/800nm probe and a 650nm pump/800nm probe. The bandstructure gives insight into the long cooling times observed.
引用
收藏
页数：2
相关论文
共 50 条
  • [1] Hot Electron Relaxation in Thin Titanium Nitride Films
    Ferguson, H.
    Guler, U.
    Kinsey, N.
    Shalaev, V. M.
    Norris, T.
    Boltasseva, A.
    2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2016,
  • [2] Hot carrier optoelectronics with titanium nitride
    Doiron, Brock
    Gusken, Nicholas A.
    Lauri, Alberto
    Li, Yi
    Mihai, Andrei
    Matsui, Takayuki
    Bower, Ryan
    Huettenhoffer, Ludwig
    Regoutz, Anna
    Dal Forno, Stefano
    Fearn, Sarah
    Petrov, Peter K.
    Cortes, Emiliano
    Cohen, Lesley F.
    Afford, Neil M.
    Lischner, Johannes
    Petrov, Peter
    Maier, Stefan A.
    Oulton, Rupert F.
    2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2020,
  • [3] Hot photoluminescence in GaN: Carrier energy relaxation and hot phonon effects
    Duboz, JY
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) : 4312 - 4319
  • [4] SUBSTRATE EFFECTS ON THE APCVD GROWTH OF TITANIUM NITRIDE FILMS
    JOHNSON, SE
    OWEN, JR
    JOURNAL DE PHYSIQUE IV, 1995, 5 (C5): : 871 - 878
  • [5] HOT-PHONON EFFECTS AND INTERBAND RELAXATION PROCESSES IN PHOTOEXCITED GAAS QUANTUM WELLS
    JOSHI, RP
    FERRY, DK
    PHYSICAL REVIEW B, 1989, 39 (02): : 1180 - 1187
  • [6] The electron-phonon relaxation time in thin superconducting titanium nitride films
    Kardakova, A.
    Finkel, M.
    Morozov, D.
    Kovalyuk, V.
    An, P.
    Dunscombe, C.
    Tarkhov, M.
    Mauskopf, P.
    Klapwijk, T. M.
    Goltsman, G.
    APPLIED PHYSICS LETTERS, 2013, 103 (25)
  • [7] Mechanical properties of titanium nitride films obtained by reactively sputtering with hot target
    Babinova, R. V.
    Smirnov, V. V.
    Useenov, A. S.
    Kravchuk, K. S.
    Gladkikh, E. V.
    Shapovalov, V. I.
    Mylnikov, I. L.
    24TH INTERNATIONAL CONFERENCE ON VACUUM TECHNIQUE AND TECHNOLOGY, 2017, 872
  • [8] Hot carrier devices using visible and NIR responsive titanium nitride nanostructures with stoichiometry variation
    Podder, Santanu
    Pal, Arup R.
    OPTICAL MATERIALS, 2019, 97
  • [9] THE GROWTH OF TITANIUM NITRIDE ON HOT FILAMENTS
    POLLARD, FH
    WOODWARD, P
    JOURNAL OF THE CHEMICAL SOCIETY, 1948, (OCT): : 1709 - 1713
  • [10] Quantum interference effects in titanium nitride films at low temperatures
    Roy, Manosi
    Mucha, Nikhil R.
    Ponnam, Rahul G.
    Jaipan, Panupong
    Scott-Emuakpor, Onome
    Yarmolenko, Sergey
    Majumdar, Alak K.
    Kumar, Dhananjay
    THIN SOLID FILMS, 2019, 681 : 1 - 5
12345