In-situ formation of Ge-rich SiGe alloy by electron beam evaporation and the effect of post deposition annealing on the energy band gap

被引:12
|
作者
Tah, Twisha [1 ]
Singh, Ch. Kishan [1 ]
Amirthapandian, S. [1 ]
Madapu, K. K. [1 ]
Sagdeo, A. [2 ,3 ]
Ilango, S. [1 ]
Mathews, T. [1 ]
Dash, S. [4 ]
机构
[1] HBNI, Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India
[2] Raja Ramanna Ctr Adv Technol, Synchrotrons Utilizat Sect, Indore 452013, Madhya Pradesh, India
[3] Homi Bhabha Natl Inst, Bombay 400094, Maharashtra, India
[4] VIT Univ, CBCMT, Vellore 632014, Tamil Nadu, India
关键词
Poly-SiGe thin film; In-situ crystallization; Band gap; Diffusion; FILM SOLAR-CELLS; THIN-FILM; MICROCRYSTALLINE SILICON; INDUCED CRYSTALLIZATION; AMORPHOUS-SILICON; LAYER EXCHANGE; GERMANIUM; DIFFUSION; SEMICONDUCTORS; NUCLEATION;
D O I
10.1016/j.mssp.2018.02.015
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the synthesis of polycrystalline (poly)-SiGe alloy thin films through solid state reaction of Si/Ge multilayer thin films on Si and glass substrates at low temperature of 500 degrees C. The pristine thin film was deposited using electron beam evaporation with optimized in-situ substrate heating. Our results show the co-existence of amorphous Si (a-Si) phase along with the poly-SiGe phase in the pristine thin film. The a-Si phase was found to subsume into the SiGe phase upon post deposition annealing in the temperature range from 600 degrees to 800 degrees C. Additionally, dual energy band gaps could be observed in the optical properties of the annealed poly-SiGe thin films. The stoichiometric evolution of the pristine thin film and its subsequent effect on the band gap upon annealing are discussed on the basis of diffusion characteristics of Si in poly-SiGe.
引用
收藏
页码:31 / 37
页数:7
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