In-situ formation of Ge-rich SiGe alloy by electron beam evaporation and the effect of post deposition annealing on the energy band gap

被引：12
|
作者：
Tah, Twisha [1 ]
Singh, Ch. Kishan [1 ]
Amirthapandian, S. [1 ]
Madapu, K. K. [1 ]
Sagdeo, A. [2 ,3 ]
Ilango, S. [1 ]
Mathews, T. [1 ]
Dash, S. [4 ]
机构：
[1] HBNI, Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India
[2] Raja Ramanna Ctr Adv Technol, Synchrotrons Utilizat Sect, Indore 452013, Madhya Pradesh, India
[3] Homi Bhabha Natl Inst, Bombay 400094, Maharashtra, India
[4] VIT Univ, CBCMT, Vellore 632014, Tamil Nadu, India
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2018年 / 80卷
关键词：
Poly-SiGe thin film; In-situ crystallization; Band gap; Diffusion; FILM SOLAR-CELLS; THIN-FILM; MICROCRYSTALLINE SILICON; INDUCED CRYSTALLIZATION; AMORPHOUS-SILICON; LAYER EXCHANGE; GERMANIUM; DIFFUSION; SEMICONDUCTORS; NUCLEATION;
D O I：
10.1016/j.mssp.2018.02.015
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the synthesis of polycrystalline (poly)-SiGe alloy thin films through solid state reaction of Si/Ge multilayer thin films on Si and glass substrates at low temperature of 500 degrees C. The pristine thin film was deposited using electron beam evaporation with optimized in-situ substrate heating. Our results show the co-existence of amorphous Si (a-Si) phase along with the poly-SiGe phase in the pristine thin film. The a-Si phase was found to subsume into the SiGe phase upon post deposition annealing in the temperature range from 600 degrees to 800 degrees C. Additionally, dual energy band gaps could be observed in the optical properties of the annealed poly-SiGe thin films. The stoichiometric evolution of the pristine thin film and its subsequent effect on the band gap upon annealing are discussed on the basis of diffusion characteristics of Si in poly-SiGe.
引用
收藏
页码：31 / 37
页数：7
相关论文
共 9 条
  • [1] Ge-rich SiGe thin film deposition by co-sputtering in in-situ and ex-situ solid phase crystallization for photovoltaic applications
    Shahahmadi, S. A.
    Zulkefle, A. Aizan
    Hasan, A. K. M.
    Rana, S. M.
    Bais, B.
    Akhtaruzzaman, M.
    Alamoud, A. R. M.
    Amin, N.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2016, 56 : 160 - 165
  • [2] Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-rich SiGe-on-Insulator
    Yang, Haigui
    Iyota, Masatoshi
    Ikeura, Shogo
    Wang, Dong
    Nakashima, Hiroshi
    TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS, 2011, 470 : 79 - +
  • [3] Passivation of Electrically Active Defects in Ge-Rich SiGe-on-Insulator by Al2O3 Deposition and Subsequent Post-Deposition Annealing
    Yang, Haigui
    Iyota, Masatoshi
    Ikeura, Shogo
    Wang, Dong
    Nakashima, Hiroshi
    APPLIED PHYSICS EXPRESS, 2010, 3 (07)
  • [4] Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing
    Yang, Haigui
    Iyota, Masatoshi
    Ikeura, Shogo
    Wang, Dong
    Nakashima, Hiroshi
    SOLID-STATE ELECTRONICS, 2011, 60 (01) : 128 - 133
  • [5] Formation of Ge dot or film in Ge/Si heterostructure by using sub-monolayer carbon deposition on top and in-situ post annealing
    Itoh, Yuhki
    Hatakeyama, Shinji
    Kawashima, Tomoyuki
    Washio, Katsuyoshi
    THIN SOLID FILMS, 2016, 602 : 32 - 35
  • [6] LOW-ENERGY ELECTRON-BEAM-ENHANCED FORMATION OF ULTRATHIN INSULATING SILICON OXYNITRIDE LAYERS ON SI(100) AT MODERATE TEMPERATURES - IN-SITU DETERMINATION OF THE BAND-GAP ENERGY USING ELECTRON-ENERGY-LOSS SPECTROSCOPY
    POVEDA, P
    GLACHANT, A
    SURFACE SCIENCE, 1995, 323 (03) : 258 - 268
  • [7] In-situ annealing temperature effect on variant selection within (3 grains of TA15 alloy by electron beam powder bed fusion
    Tao, Dingbo
    Li, Shufeng
    Zhou, Shengyin
    Liu, Huiying
    Li, Xin
    Li, Shaolong
    Zhang, Xin
    Li, Bo
    JOURNAL OF ALLOYS AND COMPOUNDS, 2025, 1021
  • [8] Effect of post-deposition heat treatments on the microstructure and tensile properties of wire-fed electron beam directed energy deposition GH4169 Ni-based alloy
    Zhao, Chunzhi
    Wang, Liang
    Wang, Binbin
    Fan, Meiyu
    Zhang, Yong
    Zhou, Jiachen
    Zhang, Weikun
    Luo, Liangshun
    Chen, Ruirun
    Su, Yanqing
    Guo, Jingjie
    MATERIALS CHARACTERIZATION, 2024, 215
  • [9] Wire-fed electron beam directed energy deposition of Ti-6Al-2Zr-1Mo-1V alloy and the effect of annealing on the microstructure, texture, and anisotropy of tensile properties
    Zhang, Guodong
    Li, Neng
    Gao, Jianshi
    Xiong, Huaping
    Yu, Huai
    Yuan, Hong
    ADDITIVE MANUFACTURING, 2022, 49
1