MODELLING 2DEG CHARGES IN AlGaN/GaN HETEROSTRUCTURES

被引：0

作者：

Longobardi, Giorgia ^{[1
]}

Udrea, Florin ^{[1
]}

Sque, Stephen ^{[2
]}

Croon, Jeroen ^{[2
]}

Hurkx, Fred ^{[2
]}

Napoli, Ettore ^{[3
]}

Sonsky, Jan ^{[2
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

[2] NXP Semicond, NL-5656 AE Eindhoven, Netherlands

[3] Univ Naples Federico II, DIBET, I-80125 Naples, Italy

来源：

2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2 | 2012年 / 2卷

关键词：

PIEZOELECTRIC POLARIZATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we compare different approaches to calculating the charge density in the 2DEG layer of AlGaN/GaN HEMTs. The methods used are (i) analytical theory implemented in MATLAB, (ii) finite-element analysis using semiconductor TCAD software that implements only the Poisson and continuity equations, and (iii) 1D software that solves the Poisson and Schrodinger equations self-consistently. By using the 1D Poisson-Schrodinger solver, we highlight the consequences of neglecting the Schrodinger equation. We conclude that the TCAD simulator predicts with a reasonable level of accuracy the electron density in the 2DEG layer for both a conventional HEMT structure and one featuring an extra GaN cap layer. In addition, while the sheet charge density is not significantly affected by including Schrodinger, its confinement in the channel is found to be modified.

引用

页码：363 / 366

页数：4