Dim C60 fullerenes on Si(111) √3 x √3-Ag surface

被引：10

作者：

Gruznev, D. V. ^{[1
,2
]}

Matetskiy, A. V. ^{[1
,2
]}

Bondarenko, L. V. ^{[1
,2
]}

Zotov, A. V. ^{[1
,2
,3
]}

Saranin, A. A. ^{[1
,2
]}

Chou, J. P. ^{[4
]}

Wei, C. M. ^{[4
]}

Wang, Y. L. ^{[4
]}

机构：

[1] Inst Automat & Control Proc, Vladivostok 690041, Russia

[2] Far Eastern Fed Univ, Sch Nat Sci, Vladivostok 690950, Russia

[3] Vladivostok State Univ Econ & Serv, Dept Elect, Vladivostok 690600, Russia

[4] Acad Sinica, Inst Atom & Mol Sci, Taipei, Taiwan

来源：

SURFACE SCIENCE | 2013年 / 612卷

基金：

俄罗斯基础研究基金会;

关键词：

Atom-solid interactions; Silicon; Fullerene; Surface diffusion; Scanning tunneling microscopy; Density functional calculations; ADSORPTION; SUBSTRATE;

D O I：

10.1016/j.susc.2013.02.007

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Scanning tunneling microscopy (STM) observations of the close-packed C-60 fullerene arrays on Si(111) root 3 x root 3 - Ag surface have revealed the presence of dim C-60 molecules which constitute 9-12% of all fullerenes. The dim C-60 fullerenes reside similar to 1.6 angstrom lower than the bright ("normal") C-60. While the bright C-60 are in continuous rotation, the dim C-60 are fixed in one of the single orientations, indicating a more tight bonding to the surface. At room temperature (RT), the dynamic switching from bright to dim C-60 and vice versa has been detected. Switching slows down with decreasing temperature and becomes completely frozen at 110 K, which implies that the switching is a thermally driven process. RT deposition of similar to 0.1 monolayer of Ag onto C-60 array eliminates completely the dim C-60 molecules. Experimental results can be understood if one assumes that formation of the dim C-60 is associated with disintegration of Ag trimer on Si(111) root 3 x root 3 - Ag surface under a given C-60 fullerene. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：31 / 36

页数：6

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