Polarization of Photoluminescence from Partial Dislocations in 4H-SiC

被引：4

作者：

Hirano, Rii ^{[1
,2
]}

Tsuchida, Hidekazu ^{[3
]}

Tajima, Michio ^{[1
]}

Itoh, Kohei M. ^{[2
]}

Maeda, Koji ^{[4
]}

机构：

[1] Inst Space & Astronaut Sci JAXA, Sagamihara, Kanagawa 2525210, Japan

[2] Keio Univ, Sch Fundamental Sci & Technol, Yokohama, Kanagawa 2238522, Japan

[3] Cent Res Inst Elect Power Ind, Yokosuka, Kanagawa 2400196, Japan

[4] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 01期

关键词：

I-N-DIODES; EPITAXIAL LAYERS; STACKING-FAULTS; RECOMBINATION; LUMINESCENCE; SEMICONDUCTORS; DEFECTS; DIAMOND; WAFERS; PIN;

D O I：

10.7567/APEX.6.011301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polarization characteristics of luminescence from partial dislocations (PDs) in 4H-SiC have been investigated by room-temperature photoluminescence (PL) imaging. The PLs from mobile PDs under optical excitation, which are 30 degrees-Si(g) PDs, and PDs tilted by 6 degrees from their Burgers vector (6 degrees-PDs) were found to be polarized perpendicular to their dislocation lines. In contrast, the PL from immobile 30 degrees-C(g) PDs was not polarized. The present results suggest that the carriers bound to the 30 degrees-Si(g) and 6 degrees-PDs have anisotropic wave functions and those bound to 30 degrees-C(g) PDs have isotropic wave functions. (C) 2013 The Japan Society of Applied Physics

引用

页数：3

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