Vacuum-enhanced nickel-induced crystallization of hydrogenated amorphous silicon

被引：5

作者：

Budini, N. ^{[1
]}

Rinaldi, P. A. ^{[1
]}

Arce, R. D. ^{[1
,2
]}

Schmidt, J. A. ^{[1
,2
]}

Koropecki, R. R. ^{[1
,2
]}

Buitrago, R. H. ^{[1
,2
]}

机构：

[1] UNL CONICET, Inst Desarrollo Tecnol Ind Quim, Santa Fe, Argentina

[2] UNL, Fac Ingn Quim, Santa Fe, Argentina

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 07期

关键词：

INDUCED LATERAL CRYSTALLIZATION; METAL-INDUCED CRYSTALLIZATION; POLYCRYSTALLINE SILICON; THIN-FILMS; GLASS; RELAXATION; QUALITY; GROWTH;

D O I：

10.1063/1.4757574

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the results of enhanced nickel induced crystallization of intrinsic hydrogenated amorphous silicon thin films under vacuum conditions. Crystallization was performed by conventional furnace annealing at both atmospheric pressure and vacuum or low pressure conditions (approximate to 10(-6)Torr) for comparison. We have investigated the influence of low pressure during annealing on the resulting polycrystalline films by means of optical microscopy, ultraviolet reflectance, and photoacoustic spectrometry measurements. A faster crystallization and a smaller grain size were observed when the process is carried out under vacuum, with an annealing time reduction of more than 50%. We discuss, from a thermodynamical viewpoint, some possible causes by which vacuum annealing influences incubation and nucleation stages due to the presence of mobile hydrogen atoms inside the amorphous silicon matrix. Large grains with diameters of 30 and 100 pm were obtained at vacuum and atmospheric pressure, respectively. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757574].

引用

页数：7

共 33 条

[1] Fabrication and characterisation of crystalline silicon thin-film materials for solar cells [J].

Aberle, Armin G. .

THIN SOLID FILMS, 2006, 511 (26-34) :26-34

[2] Relaxation in glassforming liquids and amorphous solids [J].

Angell, CA ;

Ngai, KL ;

McKenna, GB ;

McMillan, PF ;

Martin, SW .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (06) :3113-3157

[3] HYDROGEN EFFUSION - A PROBE FOR SURFACE DESORPTION AND DIFFUSION [J].

BEYER, W .

PHYSICA B, 1991, 170 (1-4) :105-114

[4]

Beyer W., 2011, ADV CHARACTERIZATION

[5] Influence of microstructure and hydrogen concentration on amorphous silicon crystallization [J].

Budini, N. ;

Rinaldi, P. A. ;

Schmidt, J. A. ;

Arce, R. D. ;

Buitrago, R. H. .

THIN SOLID FILMS, 2010, 518 (18) :5349-5354

[6] Modeling of large-grain polysilicon formation under retardation effect of SPC [J].

Cheng, CF ;

Leung, TC ;

Poon, MC ;

Kok, CW ;

Chan, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (12) :2205-2210

[7]

Dimova-Malinovska D, 2009, J OPTOELECTRON ADV M, V11, P1079

[8] Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films [J].

Ferri, F. A. ;

Zanatta, A. R. ;

Chambouleyron, I. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (09)

[9] ROLE OF MOBILE HYDROGEN IN THE AMORPHOUS-SILICON RECRYSTALLIZATION [J].

GODET, C ;

LAYADI, N ;

CABARROCAS, PRI .

APPLIED PHYSICS LETTERS, 1995, 66 (23) :3146-3148

[10] Ellipsometry investigation of the amorphous-to-microcrystalline transition in a-Si:H under hydrogen-plasma treatment [J].

Hadjadj, A. ;

Pham, N. ;

Roca i Cabarrocas, P. ;

Jbara, O. ;

Djellouli, G. .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (08)

← 1 2 3 4 →