Evolution of self-assembled InAs quantum dot molecules by molecular beam epitaxy

被引：1

作者：

Tangmettajittakul, Ong-arj ^{[1
]}

Thainoi, Supachok ^{[1
]}

Panyakeow, Somsak ^{[1
]}

Ratanathammaphan, Somchai ^{[1
]}

机构：

[1] Chulalongkorn Univ, Semicond Device Res Lab, Nanotech Ctr Excellence, Dept Elect Engn,Fac Engn, Bangkok 10330, Thailand

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 7 | 2012年 / 9卷 / 07期

关键词：

quantum dots; quantum dot molecules; growth rates; INGAAS; GAAS;

D O I：

10.1002/pssc.201100620

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Self-assembled InAs quantum dot molecules (QDMs) have been grown by thin-capping-and-regrowth MBE technique. The QDM-forming conditions have been changed by varying InAs growth rate in the range of 0.01-0.03 ML/s. We found that the InAs growth rate affects nano-propeller shape, dot density, and dot height. The densities of QDs, nano-propellers, and QDMs are increasing while increasing the InAs growth rate. In contrast, the dot height and the length of propeller blades are contrary to growth rate. Also, the uniformity of dots in QDMs can be changed by an increase of growth rate. These results are confirmed by photoluminescence (PL) measurement. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1534 / 1536

页数：3

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