Influences of SiOx layer thickness on the characteristics of In-Zn-O/SiOx/n-Si hetero-junction structure solar cells

被引：14

作者：

Fang, Hau-Wei ^{[1
]}

Hsieh, Tsung-Eong ^{[1
]}

Juang, Jenh-Yih ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat & Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

来源：

SURFACE & COATINGS TECHNOLOGY | 2013年 / 231卷

关键词：

Indium zinc oxide; Pulsed laser deposition; Hetero-junction structured solar cells; OXIDE; OPERATION; BARRIER; FILMS;

D O I：

10.1016/j.surfcoat.2012.07.067

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Indium zinc oxide (IZO) film was directly deposited on an n-type Si substrate by pulsed laser deposition (PLD) to form the IZO/SiOx/n-Si hetero-junction solar cell. Analytical results indicated that the thickness and quality of the thermal SiOx layer plays a prominent role in determining the conversion efficiency of the solar cell. The sample containing an about 1.78-nm-thick SiOx layer exhibits an open-circuit voltage of 035 V, a short-circuit current density of 28.6 mA/cm(2), a fill factor of 34.3%, and an overall conversion efficiency of 3.4% under AM1.5 condition. The effects of the SiOx layer thickness and the associated interface states on the carrier transport are discussed. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：214 / 218

页数：5

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