Influences of SiOx layer thickness on the characteristics of In-Zn-O/SiOx/n-Si hetero-junction structure solar cells

被引：14

作者：

Fang, Hau-Wei ^{[1
]}

Hsieh, Tsung-Eong ^{[1
]}

Juang, Jenh-Yih ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat & Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

来源：

SURFACE & COATINGS TECHNOLOGY | 2013年 / 231卷

关键词：

Indium zinc oxide; Pulsed laser deposition; Hetero-junction structured solar cells; OXIDE; OPERATION; BARRIER; FILMS;

D O I：

10.1016/j.surfcoat.2012.07.067

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Indium zinc oxide (IZO) film was directly deposited on an n-type Si substrate by pulsed laser deposition (PLD) to form the IZO/SiOx/n-Si hetero-junction solar cell. Analytical results indicated that the thickness and quality of the thermal SiOx layer plays a prominent role in determining the conversion efficiency of the solar cell. The sample containing an about 1.78-nm-thick SiOx layer exhibits an open-circuit voltage of 035 V, a short-circuit current density of 28.6 mA/cm(2), a fill factor of 34.3%, and an overall conversion efficiency of 3.4% under AM1.5 condition. The effects of the SiOx layer thickness and the associated interface states on the carrier transport are discussed. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：214 / 218

页数：5

共 17 条

[1] Influence of radio frequency sputtering power towards the properties of indium zinc oxide semiconducting films [J].

Aw, K. C. ;

Tsakadze, Z. ;

Lohani, A. ;

Mhaisalkar, S. .

SCRIPTA MATERIALIA, 2009, 60 (01) :48-51

[2] Extraction of Si-SiO2 interface trap densities in MOS structures with ultrathin oxides [J].

Bauza, D .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (11) :658-660

[3] Fabrication and characterization of amorphous In Zn-O/SiOx/n-Si heterojunction solar cells [J].

Fang, Hau-Wei ;

Liu, Shiu-Jen ;

Hsieh, Tsung-Eong ;

Juang, Jenh-Yih ;

Hsieh, Jang-Hsing .

SOLAR ENERGY, 2011, 85 (11) :2589-2594

[4] SNO2-SI SOLAR-CELLS - HETEROSTRUCTURE OR SCHOTTKY-BARRIER OR MIS-TYPE DEVICE [J].

GHOSH, AK ;

FISHMAN, C ;

FENG, T .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3490-3498

[5] Physical properties and growth kinetics of co-sputtered indium-zinc oxide films [J].

Huang, Changgang ;

Wang, Meili ;

Liu, Quanlin ;

Cao, Yongge ;

Deng, Zhonghua ;

Huang, Zhi ;

Liu, Yuan ;

Huang, Qiufeng ;

Guo, Wang .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (09)

[6] Examination of the Si(111)-SiO2, Si(110)-SiO2, and Si(100)-SiO2 interfacial properties following rapid thermal annealing [J].

Hurley, PK ;

O'Sullivan, BJ ;

Cubaynes, FN ;

Stolk, PA ;

Widdershoven, FP ;

Das, JH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (03) :G194-G197

[7] Influence of DC magnetron sputtering parameters on the properties of amorphous indium zinc oxide thin film [J].

Jung, YS ;

Seo, HY ;

Lee, DW ;

Jeon, DY .

THIN SOLID FILMS, 2003, 445 (01) :63-71

[8]

Moriga T, 1998, J AM CERAM SOC, V81, P1310, DOI 10.1111/j.1151-2916.1998.tb02483.x

[9] Structural and physical characterisation of transparent conducting pulsed laser deposited In2O3-ZnO thin films [J].

Naghavi, N ;

Marcel, C ;

Dupont, L ;

Rougier, A ;

Leriche, JB ;

Guéry, C .

JOURNAL OF MATERIALS CHEMISTRY, 2000, 10 (10) :2315-2319

[10] OPEN-CIRCUIT VOLTAGE OF MIS SILICON SOLAR-CELLS [J].

PONPON, JP ;

SIFFERT, P .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3248-3251

← 1 2 →