High Performance 14nm FinFET Technology for Low Power Mobile RF Application

被引：0

作者：

Jeong, Eui-Young ^{[1
]}

Song, Mingeun ^{[1
]}

Choi, Ilhyeon ^{[1
]}

Shin, Huichul ^{[1
]}

Song, Jinhyeok ^{[1
]}

Maeng, Wooyeol ^{[1
]}

Park, Halim ^{[1
]}

Yoon, Hyunki ^{[1
]}

Kim, Sungchul ^{[1
]}

Park, Sunny ^{[1
]}

You, Bong Ho ^{[1
]}

Cho, Hag-Ju ^{[1
]}

An, Young Chang ^{[1
]}

Lee, S. K. ^{[1
]}

Kwon, S. D. ^{[1
]}

Jung, Soon-Moon ^{[1
]}

机构：

[1] Samsung Elect, Syst LSI Div, 1 Samsung Ro, Yongin, Gyeonggi Do, South Korea

来源：

2017 SYMPOSIUM ON VLSI TECHNOLOGY | 2017年

关键词：

FinFETs; current gain cutoff frequency; intrinsic gain; power consumption; gate resistance; VNCAP;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

RF-CMOS process employing 14nm FinFET technology is introduced for the first time and its RF performance is characterized. Compared with its 28nm planar counterpart, the optimized 14nm RF FinFET consumes 63% of DC power with 53% of device active area and 3.8 times higher intrinsic gain (gm/gds). Based on the 14 nm technology, VNCAP with higher cap density (8%) and Q-factor (23%) is also verified for mobile RF application.

引用

页码：T142 / T143

页数：2