Indium diffusion through high-k dielectrics in high-k/InP stacks

被引：37

作者：

Dong, H. ^{[1
]}

Cabrera, W. ^{[1
]}

Galatage, R. V. ^{[2
]}

Santosh, K. C. ^{[1
]}

Brennan, B. ^{[1
]}

Qin, X. ^{[1
]}

McDonnell, S. ^{[1
]}

Zhernokletov, D. ^{[3
]}

Hinkle, C. L. ^{[1
]}

Cho, K. ^{[1
]}

Chabal, Y. J. ^{[1
]}

Wallace, R. M. ^{[1
,3
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[2] Univ Texas Dallas, Dept Elect Engn, Richardson, TX 75080 USA

[3] Univ Texas Dallas, Dept Phys, Richardson, TX 75080 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 06期

基金：

美国国家科学基金会;

关键词：

ATOMIC LAYER DEPOSITION; OXIDES; CHEMISTRY; SCALE;

D O I：

10.1063/1.4817932

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Evidence of indium diffusion through high-k dielectric (Al2O3 and HfO2) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a POx rich interface. (C) 2013 AIP Publishing LLC.

引用

页数：4

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