Silicon power devices: RF power transistor & electric power device

被引：0

作者：

Liu, YK ^{[1
]}

Zhao, T ^{[1
]}

Li, SF ^{[1
]}

机构：

[1] Hebei Semicond Res Inst, Shijiazhuang 050051, Peoples R China

来源：

SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews the history, evolution, and applications of silicon microwave & RF power transistors and electric power devices simply. The current status of silicon microwave & RF power transistors (BJT, DMOSFET, SIT) and a new kind of electric power device-RSD in HSRI (Hebei Semiconductor Research Institute) are mainly presented. Important techniques for manufacturing such power devices are introduced simply. Future trends of such power devices are given briefly.

引用

页码：149 / 154

页数：6

共 17 条

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