Effects of magnetic field on multi-excitonic structures in GaAs quantum dots

被引：3

作者：

Saito, F ^{[1
]}

Yamagiwa, M

Ikeda, K

Ogawa, Y

Minami, F

Koguchi, N

机构：

[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan

[2] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

JOURNAL OF LUMINESCENCE | 2006年 / 119卷

关键词：

GaAs; quantum dots; exciton; micro-photoluminescence;

D O I：

10.1016/j.jlumin.2006.01.053

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have studied multi-excitonic energy levels confined in single GaAs/AlGaAs quantum dots grown by modified droplet epitaxy via micro-photoluminescence (mu PL) measurements under a magnetic field. From the excitation intensity dependence of the mu PL spectrum of a single GaAs Quantum dot, it is possible to see the emissions from multi-excitonic energy levels. By applying a magnetic field, splitting of the exciton line is observed. Similarly to the exciton line, the multi-exciton lines split with increasing magnetic field. It can be considered that the splitting of the multi-exciton lines arises from the exciton Zeeman splitting essentially. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：565 / 569

页数：5

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