Characteristics of deep UV optics at 193nm & 157nm

被引：3
|
作者：
Callahan, GP [1 ]
Flint, BK [1 ]
机构：
[1] Acton Res Corp, Acton, MA 01720 USA
来源：
LASER-INDUCED DAMAGE IN OPTICAL MATERIALS: 1998 | 1999年 / 3578卷
关键词：
ArF 193nm and F-2 157nm excimer lasers; Deep UV (DUV); microlithography; optical components; laser damage threshold;
D O I：
10.1117/12.344438
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The increasing use of Argon Fluoride (ArF) 193nm excimer lasers in microlithography, surgical procedures and other applications have created the requirement for an increasingly larger number of specialized optical components and thin film coatings. At 193nn these include coated components that can withstand long duration exposure to ultraviolet (UV) radiation without significant change in performance. Similar coatings and components for Fluorine (F-2) lasers operating at 157nm are under development. At these deep UV (DUV) wavelengths, potential coating materials as well as substrates are very limited due to absorption and impurities. Characteristics of various types of thin film coatings including reflective, anti-reflective, beam-splitting, beam attenuating and optical bandpass filters, at both 193nm and 157nm, are measured using a specially designed vacuum spectrophotometer system. Results of these measurements as well as plans for further coating development are presented.
引用
收藏
页码：45 / 53
页数：9
相关论文
共 50 条
  • [41] 25nm immersion lithography at a 193nm wavelength
    Smith, BW
    Fan, YF
    Slocum, M
    Zavyalova, L
    Optical Microlithography XVIII, Pts 1-3, 2005, 5754 : 141 - 147
  • [42] New purged UV spectroscopic ellipsometer to characterize 157nm nanolithographic materials
    Boher, Pierre, 2000, Materials Research Society, Warrendale, PA, United States (584):
  • [43] Interference patterning of gratings with a period of 150 nm at a wavelength of 157nm
    Fütterer, G
    Herbst, W
    Rottstegge, J
    Ferstl, M
    Sebald, M
    Schwider, J
    OPTICAL MICROLITHOGRAPHY XV, PTS 1 AND 2, 2002, 4691 : 1703 - 1713
  • [44] A new purged UV spectroscopic ellipsometer to characterize 157nm nanolithographic materials
    Boher, P
    Piel, JP
    Evrard, P
    Stehle, JL
    MATERIALS ISSUES AND MODELING FOR DEVICE NANOFABRICATION, 2000, 584 : 177 - 182
  • [45] Selete activity of 157nm lithography and masks
    Yoshioka, N
    Itani, T
    Wakamiya, W
    19TH EUROPEAN CONFERENCE ON MASK TECHNOLOGY FOR INTEGRATED CIRCUITS AND MICROCOMPONENTS, 2003, 5148 : 220 - 224
  • [46] Role of bilayer resist in 157nm lithography
    Bowden, M
    Malik, S
    Dilocker, S
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2003, 16 (04) : 629 - 635
  • [47] Properties of fused silica for 157nm photomasks
    Moore, LA
    Smith, CM
    19TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2, 1999, 3873 : 392 - 401
  • [48] Applications of a grating shearing interferometer at 157nm
    Schreiber, H
    Dewa, P
    Dunn, M
    Hordin, R
    Mack, S
    Statt, B
    Tompkins, P
    OPTICAL MICROLITHOGRAPHY XIV, PTS 1 AND 2, 2001, 4346 : 1095 - 1106
  • [49] The challenges in materials design for 157nm photoresists
    Patterson, K
    Somervell, M
    Willson, CG
    SOLID STATE TECHNOLOGY, 2000, 43 (03) : 41 - +
  • [50] SVG 157nm lithography technical review
    Fahey, T
    McClay, J
    Hansen, M
    Tirri, B
    Lipson, M
    OPTICAL MICROLITHOGRAPHY XIV, PTS 1 AND 2, 2001, 4346 : 72 - 80
12345